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SPU02N60S5

Product SPU02N60S5, also known as a MOSFET N-Channel, boasts a 600V rating and a current capacity of 1

Quantity Unit Price(USD) Ext. Price
1 $0.489 $0.49
200 $0.191 $38.20
500 $0.183 $91.50
1500 $0.180 $270.00

Inventory:7,250

*The price is for reference only.
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Overview of SPU02N60S5

The SPU02N60S5 is a MOSFET optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching.

Pinout

The SPU02N60S5 pinout refers to the configuration and function of each pin in its TO-251-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the SPU02N60S5 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Innovative high voltage technology: The SPU02N60S5 features Infineon's innovative high-voltage technology, which enables it to operate at higher voltages while maintaining its performance and reliability.
  • Worldwide best RDS(on): With a low RDS(on) of 0.15Ω, the SPU02N60S5 offers excellent switching performance and reduced power consumption.
  • Ultra-low gate charge: The SPU02N60S5 has an ultra-low gate charge of 3.2nC, making it suitable for high-frequency applications where fast switching is required.
  • Periodic avalanche rated: The SPU02N60S5 is designed to withstand periodic avalanches, ensuring reliable operation in harsh environments.
  • Extreme dv/dt rated: With a high dv/dt rating of 200V/ns, the SPU02N60S5 can handle rapid voltage changes without compromising its performance or reliability.
  • Ultra-low effective capacitances: The SPU02N60S5 features ultra-low effective capacitances, making it suitable for high-frequency applications where low capacitance is required.
  • Improved transconductance: The SPU02N60S5 has improved transconductance, enabling it to handle higher currents and voltages while maintaining its performance and reliability.

Applications

  • Power supplies: The SPU02N60S5 is suitable for power supply applications where high-speed switching and low-voltage operation are required.
  • Motor control: With its fast switching times and low RDS(on), the SPU02N60S5 is ideal for motor control applications where precise speed and position control are necessary.
  • Lighting control: The SPU02N60S5 can be used in lighting control applications where high-speed switching and low-voltage operation are required.
  • Audio amplifiers: With its improved transconductance, the SPU02N60S5 is suitable for audio amplifier applications where high-frequency performance is necessary.
  • Inverter applications: The SPU02N60S5 can be used in inverter applications where high-speed switching and low-voltage operation are required.
  • Industrial automation: With its fast switching times and low RDS(on), the SPU02N60S5 is ideal for industrial automation applications where precise control and monitoring are necessary.

Equivalents

The SPU02N60S5 is equivalent to other high-performance MOSFETs on the market, such as:

  • Fairchild Semiconductor's FQP50R60L: This device offers similar performance and features to the SPU02N60S5.
  • International Rectifier's IRF540N: This device is another high-performance MOSFET that can be used as an alternative to the SPU02N60S5.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series CoolMOS™ Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id 5.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package PG-TO251-3-21 Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number SPU02N

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SPU02N60S5

Product SPU02N60S5, also known as a MOSFET N-Channel, boasts a 600V rating and a current capacity of 1

Inventory:

7,250