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SPP08P06P

P-Channel 60V 8.8A TO-220 Power MOSFET

Inventory:5,206

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Overview of SPP08P06P

The SPP08P06P is a P-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. This MOSFET features a low on-resistance and high current capability, making it suitable for power switching and amplification in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SPP08P06P MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SPP08P06P offers a low on-resistance, minimizing power dissipation and improving efficiency in power management applications.
  • High Current Capability: With its high current-handling capacity, this MOSFET can drive significant loads in various circuit configurations.
  • Enhancement Mode: The enhancement mode design allows for easy and precise control of the MOSFET's switching behavior.
  • Fast Switching Speed: The SPP08P06P features fast switching characteristics, enabling rapid on/off transitions for efficient power control.
  • Compact Package: Available in a compact and space-saving package for integration into small electronic devices.

Note: For detailed technical specifications, please refer to the SPP08P06P datasheet.

Application

  • Power Management: Ideal for power switching, voltage regulation, and power amplification in electronic circuits.
  • Motor Control: Suitable for driving motors and controlling their speed and direction in motor driver applications.
  • LED Lighting: Used in LED driver circuits for efficient power distribution and control of LED lighting systems.

Functionality

The SPP08P06P MOSFET is designed for efficient power management, offering low on-resistance and high current capability for reliable performance in various electronic applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal for switching the MOSFET on and off.
  • Load Connection: Connect the load between the drain and source terminals for power switching applications.
  • Heat Dissipation: Ensure proper heat sinking to dissipate any generated heat during operation for optimal performance.

Frequently Asked Questions

Q: Can the SPP08P06P be used in high-power applications?
A: Yes, the SPP08P06P's high current capability makes it suitable for high-power electronic circuits.

Equivalent

For similar functionalities, consider these alternatives to the SPP08P06P:

  • IRF4905PBF: A comparable P-Channel MOSFET with similar performance characteristics for power management applications.
  • FQP16P10: This P-Channel MOSFET offers high current handling and low on-resistance for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology GaN Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 8.8 A Rds On - Drain-Source Resistance 300 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 42 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Fall Time 14 ns
Height 15.65 mm Length 10 mm
Product Type MOSFET Rise Time 46 ns
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 48 ns
Typical Turn-On Delay Time 16 ns Width 4.4 mm
Part # Aliases SPP08P06PXK Unit Weight 0.068784 oz

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SPP08P06P

P-Channel 60V 8.8A TO-220 Power MOSFET

Inventory:

5,206