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SMMBTA42LT1G

Automotive-grade NPN Bipolar Junction Transistor (BJT) capable of handling voltages up to 300V and currents up to 0

Inventory:5,190

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Overview of SMMBTA42LT1G

The SMMBTA42LT1G is a PNP Bipolar Transistor designed for general-purpose amplification and switching applications. It features a low saturation voltage and high current gain, making it suitable for various electronic circuits requiring PNP transistors.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SMMBTA42LT1G PNP Bipolar Transistor for a visual representation.

Key Features

  • PNP Bipolar Transistor: The SMMBTA42LT1G is a PNP transistor suitable for general amplification and switching purposes.
  • Low Saturation Voltage: This transistor offers a low saturation voltage, reducing power dissipation in switching applications.
  • High Current Gain: With a high current gain, the SMMBTA42LT1G provides efficient amplification in electronic circuits.
  • Small Signal Transistor: This transistor is ideal for small-signal applications where moderate power is required.

Note: For detailed technical specifications, please refer to the SMMBTA42LT1G datasheet.

Application

  • Amplification: Ideal for amplification purposes in audio circuits, sensors, and signal conditioning.
  • Switching: Suitable for switching applications where low saturation voltage is critical for power efficiency.
  • Signal Processing: Used in electronic circuits for signal processing, filtering, and waveform shaping.

Functionality

The SMMBTA42LT1G PNP Bipolar Transistor is designed to amplify and switch electronic signals efficiently. It offers low saturation voltage and high current gain for improved performance in various circuit applications.

Usage Guide

  • Emitter (E): Connect to the ground or the common reference point.
  • Base (B): Apply the input signal or bias voltage to control the transistor's operation.
  • Collector (C): Collects the amplified or switched output signal.

Frequently Asked Questions

Q: Is the SMMBTA42LT1G suitable for high-speed switching applications?
A: While the SMMBTA42LT1G is not specifically designed for high-speed switching, it can be used in moderate-speed switching circuits effectively.

Equivalent

For similar functionalities, consider these alternatives to the SMMBTA42LT1G:

  • S8050: A general-purpose PNP transistor with comparable characteristics to the SMMBTA42LT1G.
  • MPSA92: This is a high-voltage PNP transistor suitable for amplification and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 0.5
IC Cont. (A) 0.5 VCEO Min (V) 300
VCBO (V) 300 VEBO (V) 6
VBE(sat) (V) 0.9 hFE Min 40
fT Min (MHz) 50 PTM Max (W) 0.225
Pricing ($/Unit) $0.0513Sample

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SMMBTA42LT1G

Automotive-grade NPN Bipolar Junction Transistor (BJT) capable of handling voltages up to 300V and currents up to 0

Inventory:

5,190