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SMMBT5551LT1G

Bipolar NPN Transistor Designed for High Voltage Operations

Quantity Unit Price(USD) Ext. Price
10000 $0.025 $250.00
5000 $0.029 $145.00
1000 $0.035 $35.00
300 $0.049 $14.70
100 $0.061 $6.10
10 $0.087 $0.87

Inventory:8,954

*The price is for reference only.
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Overview of SMMBT5551LT1G

The SMMBT5551LT1G is a PNP Bipolar Transistor designed for general-purpose switching and amplification applications. It features a maximum current of 100mA and a maximum voltage of 160V, making it suitable for a wide range of electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • C: Collector
  • B: Base

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SMMBT5551LT1G transistor for a visual representation.

Key Features

  • PNP Transistor: The SMMBT5551LT1G is a PNP transistor, allowing for high-speed switching and amplification.
  • Maximum Voltage: With a maximum voltage of 160V, this transistor can handle various voltage levels in circuits.
  • Maximum Current: The 100mA maximum current rating enables it to control moderate power loads.
  • Compact Size: Available in a small SOT-23 surface-mount package, making it ideal for compact electronic designs.
  • Wide Temperature Range: Operates across a wide temperature range, suitable for different environmental conditions.

Note: For detailed technical specifications, please refer to the SMMBT5551LT1G datasheet.

Application

  • Switching Circuits: Ideal for use in switching circuits due to its PNP transistor configuration.
  • Amplification: Suitable for amplification purposes in audio or signal processing applications.
  • Voltage Regulation: Can be used for voltage regulation and control in electronic circuits.

Functionality

The SMMBT5551LT1G PNP transistor is utilized for switching signals, amplifying weak signals, and controlling voltage levels in electronic circuits, providing versatility in circuit design.

Usage Guide

  • Base Biasing: Connect the base (B) terminal to the controlling signal or circuit through a suitable biasing resistor.
  • Collector Load: Connect the collector (C) terminal to the load or component requiring control or amplification.
  • Emitter Connection: Connect the emitter (E) terminal to the common ground or power supply reference point.

Frequently Asked Questions

Q: What is the maximum current the SMMBT5551LT1G can handle?
A: The SMMBT5551LT1G has a maximum current rating of 100mA.

Q: Is the SMMBT5551LT1G suitable for high-voltage applications?
A: Yes, the SMMBT5551LT1G can withstand a maximum voltage of 160V, making it suitable for high-voltage circuits.

Equivalent

For similar functionalities, consider these alternatives to the SMMBT5551LT1G:

  • S8550: A PNP transistor with comparable characteristics suitable for switching and amplification tasks.
  • MPSA92: This is a high-voltage PNP transistor commonly used in audio amplifier circuits and voltage regulators.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 0.2
IC Cont. (A) 0.6 VCEO Min (V) 160
VCBO (V) 180 VEBO (V) 6
VBE(sat) (V) 1 hFE Min 80
hFE Max 250 PTM Max (W) 0.225
Pricing ($/Unit) $0.0513Sample

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SMMBT5551LT1G

Bipolar NPN Transistor Designed for High Voltage Operations

Inventory:

8,954