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SIZ340DT-T1-GE3

MOSFET Dual N-Channel with 30V and 30/40A PowerPAIR8EP

Quantity Unit Price(USD) Ext. Price
1 $0.488 $0.49
10 $0.400 $4.00
30 $0.355 $10.65
100 $0.311 $31.10
500 $0.275 $137.50
1000 $0.261 $261.00

Inventory:6,616

*The price is for reference only.
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Overview of SIZ340DT-T1-GE3

The SIZ340DT-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power management applications. This MOSFET features a low ON-resistance and high current capability, making it suitable for switching power supplies, motor control, and other power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate 1: Control input for MOSFET 1
  • Source 1: Source terminal for MOSFET 1
  • Drain 1: Output terminal for MOSFET 1
  • Gate 2: Control input for MOSFET 2
  • Source 2: Source terminal for MOSFET 2
  • Drain 2: Output terminal for MOSFET 2
  • VD: Drain voltage
  • VS: Source voltage
  • VG: Gate voltage
  • GND: Ground connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIZ340DT-T1-GE3 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs in a single package for enhanced power management.
  • Low ON-Resistance: The SIZ340DT-T1-GE3 offers low ON-resistance for reduced power losses and improved efficiency.
  • High Current Capability: Capable of handling high currents, making it suitable for power applications requiring high power delivery.
  • Fast Switching Speed: This MOSFET has fast switching speeds, allowing for efficient power control and regulation.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in various power management scenarios.

Note: For detailed technical specifications, please refer to the SIZ340DT-T1-GE3 datasheet.

Application

  • Power Supplies: Ideal for use in switching power supplies and DC-DC converters for efficient power delivery.
  • Motor Control: Suitable for motor control applications in robotics, automation, and other electromechanical systems.
  • Power Electronics: Used in various power electronics applications requiring high power and efficiency.

Functionality

The SIZ340DT-T1-GE3 MOSFET consists of two N-channel MOSFETs that can be controlled independently, providing versatile power management solutions for different applications.

Usage Guide

  • Gate Drive: Apply appropriate gate voltages to the Gate 1 and Gate 2 pins to control the switching of the respective MOSFETs.
  • Power Connections: Connect the Drain and Source pins to the power supply and load to enable power switching.
  • Ground Connection: Ensure a proper ground connection to the GND pin for correct operation.

Frequently Asked Questions

Q: Can the SIZ340DT-T1-GE3 be used in high-power applications?
A: Yes, the SIZ340DT-T1-GE3 is designed for high-power applications with its low ON-resistance and high current capability.

Equivalent

For similar functionalities, consider these alternatives to the SIZ340DT-T1-GE3:

  • SI23451D-T1-GE3: A dual N-channel MOSFET with similar performance characteristics and package options.
  • IRF3205PBF: This N-channel power MOSFET provides high current handling capacity and low ON-resistance for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAIR-3x3-8
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 30 A, 40 A
Rds On - Drain-Source Resistance 9.5 mOhms, 5.1 mOhms Vgs - Gate-Source Voltage - 16 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 19 nC, 35 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 16.7 W, 31 W Channel Mode Enhancement
Tradename TrenchFET Series SIZ
Brand Vishay Semiconductors Configuration Dual
Fall Time 7 ns, 7 ns Forward Transconductance - Min 37 S, 60 S
Product Type MOSFET Rise Time 55 ns, 82 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 16 ns, 20 ns
Typical Turn-On Delay Time 13 ns, 22 ns Unit Weight 0.005046 oz

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SIZ340DT-T1-GE3

MOSFET Dual N-Channel with 30V and 30/40A PowerPAIR8EP

Inventory:

6,616