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SIS434DN-T1-GE3

SIS434DN-T1-GE3 is an N-MOSFET transistor designed for unipolar operation, with a voltage rating of 40 volts and a maximum continuous current of 17

Inventory:8,443

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Overview of SIS434DN-T1-GE3

The SIS434DN-T1-GE3 is a dual N-channel MOSFET designed for high-speed switching applications. It features a low on-state resistance and fast switching characteristics, making it ideal for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate of N-channel MOSFET 1
  • S: Source of N-channel MOSFET 1
  • D: Drain of N-channel MOSFET 1
  • G: Gate of N-channel MOSFET 2
  • S: Source of N-channel MOSFET 2
  • D: Drain of N-channel MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIS434DN-T1-GE3 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Contains two N-channel MOSFETs providing efficient high-speed switching capabilities.
  • Low On-State Resistance: Offers low RDS(ON) for minimal power dissipation and high efficiency.
  • Fast Switching Speed: Enables quick switching transitions for improved performance in power management circuits.
  • High Current Capability: Capable of handling high current levels for power applications.
  • Compact Package: Available in a compact package for space-constrained designs.

Note: For detailed technical specifications, please refer to the SIS434DN-T1-GE3 datasheet.

Application

  • Power Management Systems: Suitable for use in power management systems requiring high-speed switching.
  • Motor Control: Ideal for motor control applications where fast switching and low resistance are crucial.
  • Voltage Regulation: Can be utilized in voltage regulation circuits for efficient power delivery.

Functionality

The SIS434DN-T1-GE3 is a dual N-channel MOSFET designed for fast and efficient switching operations. It is a reliable component for power management and motor control applications.

Usage Guide

  • Gate Connection: Connect the gate pins (G) to the appropriate control circuitry for switching control.
  • Source and Drain Connections: Connect the source (S) and drain (D) pins to the corresponding circuit nodes for current flow.
  • Drive Requirements: Ensure the gate drive voltage and current meet the specifications for optimal performance.

Equivalent

For similar functionalities, consider these alternatives to the SIS434DN-T1-GE3:

  • SI2305DS-T1-GE3: Another dual N-channel MOSFET option with comparable performance characteristics.
  • IRF3205PBF: This MOSFET from Infineon offers similar switching capabilities and efficiency for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-1212-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 6.3 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 40 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 52 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIS
Brand Vishay Semiconductors Configuration Single
Fall Time 12 ns Forward Transconductance - Min 60 S
Height 1.04 mm Length 3.3 mm
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 20 ns Width 3.3 mm
Part # Aliases SIS434DN-GE3 Unit Weight 0.032487 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SIS434DN-T1-GE3

SIS434DN-T1-GE3 is an N-MOSFET transistor designed for unipolar operation, with a voltage rating of 40 volts and a maximum continuous current of 17

Inventory:

8,443
Overview of SIS434DN-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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