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SIS407DN-T1-GE3

MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

Inventory:6,020

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Submit your quote request for SIS407DN-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SIS407DN-T1-GE3

The SIS407DN-T1-GE3 is a power MOSFET designed for high-speed, high-frequency applications. It features a low on-state resistance and a compact size, making it suitable for power management and switching circuits in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for MOSFET control
  • D: Drain terminal for output connection
  • S: Source terminal connected to ground or common reference

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIS407DN-T1-GE3 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The SIS407DN-T1-GE3 features a low on-state resistance, enabling efficient power switching with minimal losses.
  • High-Speed Performance: This MOSFET is capable of high-speed switching operations, suitable for applications requiring rapid switching frequencies.
  • Compact Size: With its small form factor, the SIS407DN-T1-GE3 is ideal for space-constrained electronic designs.
  • High-Frequency Operation: Designed for high-frequency applications, this MOSFET provides reliable performance in high-speed circuits.

Note: For detailed technical specifications, please refer to the SIS407DN-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management circuits in electronic devices, providing efficient switching and control capabilities.
  • Switching Circuits: Suitable for use in various switching circuits, such as DC-DC converters, motor control, and voltage regulation.
  • High-Frequency Applications: The SIS407DN-T1-GE3 is well-suited for high-frequency electronic applications requiring high-speed operation.

Functionality

The SIS407DN-T1-GE3 power MOSFET offers low on-state resistance and high-speed performance, making it a reliable choice for high-frequency power management and switching applications.

Usage Guide

  • Gate Control: Apply the control signal to the G (Gate) terminal to regulate the switching behavior of the MOSFET.
  • Output Connection: Connect the load or circuit to be controlled to the D (Drain) terminal, with the S (Source) terminal connected to ground or the common reference.

Frequently Asked Questions

Q: Can the SIS407DN-T1-GE3 be used for power amplification?
A: While primarily designed for power management and switching, the SIS407DN-T1-GE3 can be utilized in certain power amplification applications within its specified parameters.

Equivalent

For similar functionalities, consider these alternatives to the SIS407DN-T1-GE3:

  • IRF3205: This power MOSFET offers comparable performance and features for power management and high-speed switching applications.
  • FDN327N: A compact power MOSFET suitable for high-frequency circuits and efficient power control.
  • NTD5867NL-1G: This MOSFET provides similar characteristics and can be used as an alternative for high-frequency power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-1212-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 25 A
Rds On - Drain-Source Resistance 9.5 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 400 mV Qg - Gate Charge 38 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 33 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIS
Brand Vishay Semiconductors Configuration Single
Fall Time 38 ns Forward Transconductance - Min 60 S
Height 1.04 mm Length 3.3 mm
Product Type MOSFET Rise Time 28 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 92 ns
Typical Turn-On Delay Time 23 ns Width 3.3 mm
Part # Aliases SIS407DN-GE3 Unit Weight 0.032487 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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SIS407DN-T1-GE3

MOSFET -20V Vds 8V Vgs PowerPAK 1212-8

Inventory:

6,020
Overview of SIS407DN-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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