• SIRA14DP-T1-GE3 PowerPAK-SO-8
SIRA14DP-T1-GE3 PowerPAK-SO-8

SIRA14DP-T1-GE3

SIRA14DP-T1-GE3 product description

Inventory:8,054

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Overview of SIRA14DP-T1-GE3

SIRA14DP-T1-GE3 is a Trans MOSFET N-CH optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The SIRA14DP-T1-GE3 pinout refers to the configuration and function of each pin in its PowerPAK SO-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the SIRA14DP-T1-GE3 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • 30V Operating Voltage: The SIRA14DP-T1-GE3 can operate at a maximum voltage of 30V, making it suitable for various applications.
  • 19.8A Current Rating: This Trans MOSFET N-CH has a current rating of 19.8A, allowing for efficient power handling and signal switching.
  • PowerPAK SO-8 Package: The SIRA14DP-T1-GE3 is packaged in the PowerPAK SO-8 package, which provides a compact and reliable solution for various applications.
  • N-Channel MOSFET Operation: This Trans MOSFET N-CH operates as an N-channel MOSFET, allowing for efficient switching and signal processing.
  • Excellent Performance: The SIRA14DP-T1-GE3 provides excellent performance in terms of speed, voltage, and current handling, making it suitable for various applications.

Applications

  • Analog and Digital Signal Switching: The SIRA14DP-T1-GE3 can be used for analog and digital signal switching in various applications such as audio amplifiers, motor control circuits, and power supplies.
  • Power Management Circuits: This Trans MOSFET N-CH can be used in power management circuits to regulate voltage and current levels.
  • Solid-State Relays: The SIRA14DP-T1-GE3 can be used as a solid-state relay for controlling high-voltage and high-current loads.
  • Motor Control Circuits: This Trans MOSFET N-CH can be used in motor control circuits to regulate speed, torque, and direction of DC motors.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The SIRA14DP-T1-GE3 can operate at high speeds, making it suitable for various applications that require fast switching times.
  • Low-Voltage Operation: This Trans MOSFET N-CH can operate at low voltages, making it suitable for battery-powered or low-voltage applications.
  • Compact Package: The SIRA14DP-T1-GE3 is packaged in a compact PowerPAK SO-8 package, making it suitable for space-constrained applications.
  • High Current Handling: This Trans MOSFET N-CH can handle high currents, making it suitable for applications that require high power handling.

Disadvantages

  • Sensitivity to Temperature: The SIRA14DP-T1-GE3 may be sensitive to temperature changes, which could affect its performance and reliability.
  • Limited Operating Voltage Range: This Trans MOSFET N-CH has a limited operating voltage range of 30V, making it unsuitable for applications that require higher voltages.

Equivalents

For similar functionalities, consider these alternatives to the SIRA14DP-T1-GE3:

  • SIR14DP-T1-GE3: This Trans MOSFET N-CH is a similar alternative with slightly different specifications.
  • SIR14DP-T2-GE3: This Trans MOSFET N-CH has similar specifications to the SIRA14DP-T1-GE3 but with a different package type.
  • SIR14DP-T3-GE3: This Trans MOSFET N-CH is another alternative with slightly different specifications and packaging.

Conclusion

The SIRA14DP-T1-GE3 is a high-performance Trans MOSFET N-CH that provides excellent performance in terms of speed, voltage, and current handling. It can be used for various applications such as analog and digital signal switching, power management circuits, solid-state relays, and motor control circuits.

SIRA14DP-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Vishay Siliconix
Series TrenchFET® Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V FET Feature -
Power Dissipation (Max) 3.6W (Ta), 31.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8 Base Product Number SIRA14

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SIRA14DP-T1-GE3

SIRA14DP-T1-GE3 product description

Inventory:

8,054