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SIR626LDP-T1-RE3

High-current N-Channel Power MOSFET

Inventory:8,502

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Overview of SIR626LDP-T1-RE3

The SIR626LDP-T1-RE3 is an automotive grade directFET power MOSFET designed for use in automotive and industrial applications. It features low on-resistance and fast switching performance, making it suitable for high efficiency power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Positive Power Supply
  • PGND: Power Ground
  • GND: System Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIR626LDP-T1-RE3 for a visual representation.

Key Features

  • Low On-Resistance: The SIR626LDP-T1-RE3 offers low on-resistance, minimizing power losses and improving efficiency.
  • Fast Switching Performance: With fast switching times, this MOSFET is ideal for high-frequency switching applications.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications, ensuring reliable performance in automotive systems.
  • Thermal Performance: The package design and thermal characteristics allow for effective heat dissipation, enabling continuous operation under high power conditions.
  • Robust Construction: The MOSFET is designed to withstand harsh environmental and electrical conditions, providing durability and reliability.

Note: For detailed technical specifications, please refer to the SIR626LDP-T1-RE3 datasheet.

Application

  • Automotive Power Systems: Suitable for use in automotive power distribution and control systems, including engine control, power steering, and more.
  • Industrial Motor Control: The SIR626LDP-T1-RE3 is ideal for driving and controlling motors and actuators in various industrial applications.
  • Power Management: Used in power supply and power management circuits to regulate and control power flow in electronic systems.

Functionality

The SIR626LDP-T1-RE3 is a high-performance power MOSFET designed to handle high current and high voltage applications with minimal power loss. It provides efficient power management and switching capabilities for automotive and industrial systems.

Usage Guide

  • Power Supply: Connect VCC to the positive power supply and use appropriate heat sinking for effective thermal management.
  • Switching Control: Apply control signals to the gate (G) pin to drive the switching operation based on the system requirements.
  • Load Connection: Connect the load between the drain (D) and source (S) pins to utilize the switching capabilities of the MOSFET.

Frequently Asked Questions

Q: What is the maximum operating temperature for the SIR626LDP-T1-RE3?
A: The SIR626LDP-T1-RE3 can operate within a temperature range of -55°C to 175°C, making it suitable for automotive and industrial applications.

Q: Is the SIR626LDP-T1-RE3 compatible with 12V automotive systems?
A: Yes, the SIR626LDP-T1-RE3 is designed to operate with typical 12V automotive electrical systems, providing efficient power management and control.

Equivalent

For similar functionalities, consider these alternatives to the SIR626LDP-T1-RE3:

  • FDD6637: A directFET power MOSFET with similar performance characteristics suitable for automotive and industrial applications.
  • IRF1405: This power MOSFET offers high current handling and fast switching for power management and motor control in automotive and industrial systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 186 A
Rds On - Drain-Source Resistance 1.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 135 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay / Siliconix Configuration Single
Fall Time 10 ns Forward Transconductance - Min 140 S
Product Type MOSFET Rise Time 64 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 17 ns Unit Weight 0.017870 oz

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SIR626LDP-T1-RE3

High-current N-Channel Power MOSFET

Inventory:

8,502