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SIR426DP-T1-GE3

26DP-T1-GE3, MOSFET, N, 40V, 30A, PPAK SO8:

Inventory:6,061

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Submit your quote request for SIR426DP-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SIR426DP-T1-GE3

The SIR426DP-T1-GE3 is a dual P-channel MOSFET in a PowerPAK SO-8 package designed for use in power management applications. This MOSFET features low on-state resistance and high current-handling capabilities, making it suitable for various power control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • GND: Power Ground
  • DRAIN2: Drain terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • GATE2: Gate terminal for MOSFET 2
  • VCC: Positive Power Supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIR426DP-T1-GE3 MOSFET for a visual representation.

Key Features

  • Dual P-Channel MOSFET: Provides two P-channel MOSFETs in a single package for power control applications.
  • Low On-State Resistance: The SIR426DP-T1-GE3 features low RDS(on) for efficient power management.
  • High Current Handling: Capable of handling high currents, suitable for power switching applications.
  • PowerPAK SO-8 Package: Housed in a PowerPAK SO-8 package for easy PCB integration and heat dissipation.
  • Reverse Voltage Protection: Offers reverse voltage protection for enhanced system reliability.
  • Temperature Stability: Maintains stable performance over a wide temperature range, ensuring reliable operation in varying conditions.

Note: For detailed technical specifications, please refer to the SIR426DP-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as voltage regulators and power converters.
  • Motor Control: Suitable for motor control applications where efficient power switching is required.
  • Battery Protection: Used in battery protection circuits to control power distribution and prevent overcurrent conditions.

Functionality

The SIR426DP-T1-GE3 MOSFET integrates two P-channel MOSFETs designed for efficient power control and management. It offers high performance and reliability for a wide range of power applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 8) to the positive power supply and GND (Pin 4) to the power ground.
  • MOSFET Control: Apply appropriate gate voltages to GATE1/GATE2 to control the switching of the MOSFETs.
  • Load Connection: Connect the load between DRAIN1/SOURCE1 and DRAIN2/SOURCE2 for power switching operations.

Frequently Asked Questions

Q: Is the SIR426DP-T1-GE3 suitable for automotive applications?
A: Yes, the SIR426DP-T1-GE3 is designed for automotive power management systems and can operate under automotive environmental conditions.

Equivalent

For similar functionalities, consider these alternatives to the SIR426DP-T1-GE3:

  • IRF4905PBF: A P-channel MOSFET with comparable specifications and performance characteristics.
  • FDD6637: This dual P-channel MOSFET offers similar functionality to the SIR426DP-T1-GE3 in a different package.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 10.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 31 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 41.7 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay Semiconductors Configuration Single
Height 1.04 mm Length 6.15 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 5.15 mm
Part # Aliases SIR426DP-GE3 Unit Weight 0.017870 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SIR426DP-T1-GE3

26DP-T1-GE3, MOSFET, N, 40V, 30A, PPAK SO8:

Inventory:

6,061
Overview of SIR426DP-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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