• SIR422DP-T1-GE3 PowerPAK-SO-8
SIR422DP-T1-GE3 PowerPAK-SO-8

SIR422DP-T1-GE3

Vishay Siliconix MOSFET SIR422DP-T1-GE3: 40A, 40V, 8-Pin PowerPAK SO, N-channel

Quantity Unit Price(USD) Ext. Price
1 $0.675 $0.68
10 $0.551 $5.51
30 $0.488 $14.64
100 $0.426 $42.60
500 $0.389 $194.50
1000 $0.369 $369.00

Inventory:6,096

*The price is for reference only.
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Overview of SIR422DP-T1-GE3

The SIR422DP-T1-GE3 is a dual P-Channel MOSFET in a PowerPAK package specially designed for power management applications. It features low on-resistance and high power handling capabilities, making it suitable for high-efficiency power conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • GATE2: Gate terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • DRAIN2: Drain terminal for MOSFET 2
  • VDD: Positive power supply
  • GND: Power ground
  • NC: No connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIR422DP-T1-GE3 for a visual representation.

Key Features

  • Dual P-Channel MOSFET: Offers two P-Channel MOSFETs in a single package for power management applications.
  • Low On-Resistance: The SIR422DP-T1-GE3 features low on-resistance for efficient power handling.
  • High Power Handling: Designed to handle high power levels, suitable for power conversion circuits.
  • PowerPAK Package: Comes in a PowerPAK package for enhanced thermal performance and power dissipation.
  • High Efficiency: Enables high-efficiency power management solutions in various applications.

Note: For detailed technical specifications, please refer to the SIR422DP-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as DC-DC converters and voltage regulators.
  • Motor Control: Suitable for motor control applications requiring efficient power handling.
  • Battery Management: Used in battery management circuits for power switching and control.

Functionality

The SIR422DP-T1-GE3 provides dual P-Channel MOSFET functionality in a compact package, enabling efficient power management in various electronic systems.

Usage Guide

  • Power Connections: Connect VDD (Pin 7) to the positive power supply and GND (Pin 8) to the power ground.
  • MOSFET Control: Apply appropriate gate voltages to GATE1 and GATE2 to control the MOSFETs' switching behavior.
  • Load Connection: Connect the load between DRAIN1 and SOURCE1, as well as DRAIN2 and SOURCE2 for power management.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the SIR422DP-T1-GE3?
A: The SIR422DP-T1-GE3 is designed to handle high power levels, making it suitable for power-intensive applications.

Q: Is the SIR422DP-T1-GE3 suitable for high-frequency switching applications?
A: While capable of switching at moderate frequencies, for high-frequency applications, it is recommended to refer to specialized MOSFETs designed for such requirements.

Equivalent

For similar functionalities, consider these alternatives to the SIR422DP-T1-GE3:

  • SIRA22DP-T1-GE3: Another dual P-Channel MOSFET from the same manufacturer offering similar power handling capabilities.
  • SI4412DY-T1-GE3: This dual P-Channel MOSFET provides comparable performance and features for power management applications.

SIR422DP-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 20.5 A
Rds On - Drain-Source Resistance 6.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 48 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 34.7 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay Semiconductors Configuration Single
Fall Time 11 ns Forward Transconductance - Min 70 S
Product Type MOSFET Rise Time 84 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Typical Turn-Off Delay Time 28 ns Typical Turn-On Delay Time 19 ns
Part # Aliases SIR422DP-GE3 Unit Weight 0.017870 oz

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SIR422DP-T1-GE3

Vishay Siliconix MOSFET SIR422DP-T1-GE3: 40A, 40V, 8-Pin PowerPAK SO, N-channel

Inventory:

6,096