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SIR158DP-T1-GE3

SIR158DP-T1-GE3 by VISHAY: N-type MOSFET rated for 30V and capable of handling currents up to 60A, packaged in PowerPAK SO

Inventory:5,191

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Overview of SIR158DP-T1-GE3

The SIR158DP-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed for high power applications. It features a low on-state resistance and high switching speed, making it suitable for power management and conversion applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIR158DP-T1-GE3 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The SIR158DP-T1-GE3 offers a low on-state resistance for efficient power handling.
  • High Switching Speed: With its high switching speed, this MOSFET is suitable for applications requiring fast switching frequency.
  • High Power Handling Capacity: This MOSFET is capable of handling high power levels, making it ideal for power management applications.
  • Low Gate Charge: The low gate charge of the SIR158DP-T1-GE3 results in lower switching losses and improved efficiency.
  • Robust Construction: Designed to withstand high voltage and current levels, ensuring reliability in demanding environments.

Note: For detailed technical specifications, please refer to the SIR158DP-T1-GE3 datasheet.

Application

  • Power Supplies: Ideal for use in high-power DC-DC converters and power supplies.
  • Motor Control: Suitable for motor drive applications requiring high power handling capabilities.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The SIR158DP-T1-GE3 MOSFET is designed to control the flow of high-power currents in electronic circuits. Its low on-state resistance and high switching speed make it a versatile component for various power management and conversion tasks.

Usage Guide

  • Gate Connection: Connect the Gate pin (G) to the driving signal for controlling the MOSFET.
  • Drain and Source Connections: Connect the Drain (D) and Source (S) pins to the circuit for power flow control.
  • Feedback Circuit: Implement a feedback circuit to ensure stable operation and protect the MOSFET from overcurrent situations.

Frequently Asked Questions

Q: Is the SIR158DP-T1-GE3 suitable for high-frequency applications?
A: Yes, the high switching speed of the SIR158DP-T1-GE3 makes it suitable for high-frequency applications requiring fast response times.

Equivalent

For similar functionalities, consider these alternatives to the SIR158DP-T1-GE3:

  • SIR878DP-T1-GE3: Another high-power MOSFET with comparable specifications and performance characteristics.
  • IRF1405PBF: A power MOSFET from Infineon Technologies offering similar power handling capabilities and switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 1.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 130 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 83 W Channel Mode Enhancement
Tradename TrenchFET, PowerPAK Series SIR
Brand Vishay Semiconductors Configuration Single
Height 1.04 mm Length 6.15 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 5.15 mm
Part # Aliases SIR158DP-GE3 Unit Weight 0.017870 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

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    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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SIR158DP-T1-GE3

SIR158DP-T1-GE3 by VISHAY: N-type MOSFET rated for 30V and capable of handling currents up to 60A, packaged in PowerPAK SO

Inventory:

5,191
Overview of SIR158DP-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

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We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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