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SI8483DB-T2-E1

P Channel BGA-6 MOSFET with a voltage rating of 12V and a maximum current capacity of 16A at 26mΩ resistance when operated at 4.5V

Inventory:9,996

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Overview of SI8483DB-T2-E1

The SI8483DB-T2-E1 is a P-Channel MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The SI8483DB-T2-E1 pinout refers to the configuration and function of each pin in its MicroFoot-6 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the SI8483DB-T2-E1 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • P-Channel MOSFET: The SI8483DB-T2-E1 is a P-Channel MOSFET designed for high-speed and low-voltage operations.
  • 12V 16A (Tc) 2.77W (Ta), 13W (Tc): This device has a maximum voltage rating of 12V, a current rating of 16A at a temperature coefficient of Tc, and a power dissipation of 2.77W at Ta and 13W at Tc.
  • Surface Mount: The SI8483DB-T2-E1 is designed for surface mount applications.
  • 6-Micro Foot (1.5x1): This device has a compact package size of 6-Micro Foot, which measures 1.5x1 inches.
  • MicroFoot-6 Package: The SI8483DB-T2-E1 is packaged in a MicroFoot-6 package, which provides a compact and reliable solution for surface mount applications.

Applications

  • Analog and Digital Signal Switching: The SI8483DB-T2-E1 can be used for analog and digital signal switching in various applications such as audio amplifiers, power supplies, and motor control circuits.

Equivalents

For similar functionalities, consider these alternatives to the SI8483DB-T2-E1:

  • Vishay's Other P-Channel MOSFETs: Vishay offers a range of other P-Channel MOSFETs that may be suitable for specific applications.

Frequently Asked Questions

Q: What is the maximum voltage rating of the SI8483DB-T2-E1?
A: The maximum voltage rating of the SI8483DB-T2-E1 is 12V.

Q: What is the current rating of the SI8483DB-T2-E1?
A: The current rating of the SI8483DB-T2-E1 is 16A at a temperature coefficient of Tc.

Q: What is the power dissipation of the SI8483DB-T2-E1?
A: The power dissipation of the SI8483DB-T2-E1 is 2.77W at Ta and 13W at Tc.

Q: Is the SI8483DB-T2-E1 suitable for high-speed applications?
A: Yes, the SI8483DB-T2-E1 is designed for high-speed operation, making it suitable for applications that require fast switching times.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case MicroFoot-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 16 A Rds On - Drain-Source Resistance 22 mOhms
Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 65 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 13 W
Channel Mode Enhancement Tradename TrenchFET
Series SI8 Brand Vishay Semiconductors
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 10 S Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 40 ns Typical Turn-On Delay Time 20 ns
Unit Weight 0.004528 oz

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SI8483DB-T2-E1

P Channel BGA-6 MOSFET with a voltage rating of 12V and a maximum current capacity of 16A at 26mΩ resistance when operated at 4.5V

Inventory:

9,996