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SI7960DP-T1-GE3

MOSFET substitution for SI7960DP-T1-GE3

Inventory:5,959

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Overview of SI7960DP-T1-GE3

The SI7960DP-T1-GE3 is a P-Channel MOSFET transistor with a voltage rating of -60V and a continuous drain current of -2.3A. It is designed for use in power management applications, providing efficient switching and regulation capabilities in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7960DP-T1-GE3 MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET: The SI7960DP-T1-GE3 is a P-Channel MOSFET suitable for various power management applications.
  • Voltage Rating: With a voltage rating of -60V, it can handle moderate to high voltage levels in circuits.
  • Continuous Drain Current: The -2.3A continuous drain current allows for the passing of moderate current loads.
  • Efficient Switching: This MOSFET provides efficient switching characteristics for power control applications.
  • Temperature Stability: It exhibits good temperature stability for consistent performance across operating conditions.

Note: For detailed technical specifications, please refer to the SI7960DP-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management and voltage regulation in electronic circuits.
  • Inverters and Converters: Suitable for use in inverters and DC-DC converters for efficient power control.
  • Motor Control: Can be employed in motor control applications for switching and controlling power to motors.

Functionality

The SI7960DP-T1-GE3 P-Channel MOSFET acts as a switch in electronic circuits, controlling the flow of power based on the gate voltage applied. It offers efficient power management and regulation capabilities.

Usage Guide

  • Gate Connection: Connect the gate (G) to the controlling signal or voltage level for power regulation.
  • Source-Drain Connections: Insert the load circuit between the source (S) and drain (D) terminals for power switching.

Frequently Asked Questions

Q: What is the maximum voltage the SI7960DP-T1-GE3 can handle?
A: The SI7960DP-T1-GE3 has a maximum voltage rating of -60V.

Q: Can the SI7960DP-T1-GE3 be used in high-power applications?
A: While it has a continuous drain current of -2.3A, consider higher-power MOSFETs for applications requiring greater current handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the SI7960DP-T1-GE3:

  • SI2305DS-T1-GE3: Another P-Channel MOSFET with comparable specifications and characteristics from Vishay Semiconductor.
  • SPP15P10PLG: A P-Channel MOSFET option from Infineon Technologies offering similar performance in power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Tradename TrenchFET
Series SI7 Brand Vishay / Siliconix
Height 1.04 mm Length 6.15 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 5.15 mm
Part # Aliases SI7960DP-GE3 Unit Weight 0.017870 oz

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SI7960DP-T1-GE3

MOSFET substitution for SI7960DP-T1-GE3

Inventory:

5,959