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SI7852ADP-T1-GE3

VISHAY - SI7852ADP-T1-GE3 - N CHANNEL MOSFET, 80V, 30A, SOIC

Inventory:8,597

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Overview of SI7852ADP-T1-GE3

The SI7852ADP-T1-GE3 a p-channel MOSET with a rated voltage of -30V and a continuous drain current of -4.4A. This MOSFET is designed for use in various power management applications, offering efficient switching performance and low on-resistance.

Pinout

(Note: The pin configuration below a general representation. Refer to the specific datasheet for precise details.)

    li>G: Gate
  • D: Drain
  • S: Source

Key Features

* Low-Resistance * The SI7852ADP-T1-GE3 features low on-resistance, minimizing power and heat generation during operation. * High Voltage Rating * With a rated voltage of -30V, this MOSFET can handle high-voltage applications effectively* Fast Switching Speed * This device offers fast switching characteristics, making it suitable for applications requiring rapid switching. * Enhanced Efficiency * The MOSFET's design contributes to improved efficiency in power management circuits. * ESD Protection * The device incorporates ESD protection features to safeguard against electrostatic discharge events.

Note: For detailed technical specifications, please refer to the SI7852ADP-T1-GE3 datasheet.

Application The SI7852P-T1-GE3 is commonly used in the following applications: Power Management Circuits: This MOSFET provides efficient and control capabilities in power management circuits such as voltage regulators and DC-DC converters. Switching: It can be utilized for load switching applications due to its fast response time and low on-res. Battery Protection: In battery-powered systems, this MOSFET helps protect against over conditions through effective current control. Functionality The SI7852ADP-T1-GE3 serves as an essential component in power management circuits, enabling effective control over the flow of electric current with minimal losses. Usage Guide When implementing the SI7852ADP-T1-GE3: Ensure proper connection between the gate (G), drain (D), and source (S) pins according to your circuit requirements. Pay attention to input voltage levels and ensure they are within safe operating limits specified in the datasheet.

Frequently Asked QuestionsQ: What is the maximum rated voltage for the SI7852ADP-T1-GE Three?
A: The maximum rated voltage for this p-channel MOSFET is -30V.

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 30 A Rds On - Drain-Source Resistance 17 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 30.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 62.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 8 ns
Forward Transconductance - Min 25 S Product Type MOSFET
Rise Time 9 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N Channel
Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 12 ns
Part # Aliases SI7852ADP-GE3 Unit Weight 0.017870 oz

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SI7852ADP-T1-GE3

VISHAY - SI7852ADP-T1-GE3 - N CHANNEL MOSFET, 80V, 30A, SOIC

Inventory:

8,597