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SI7623DN-T1-GE3

P-channel 20V 35A Power MOSFET in 8-pin PowerPAK 1212 package, tape and reel

Quantity Unit Price(USD) Ext. Price
1000 $0.299 $299.00
500 $0.305 $152.50
200 $0.315 $63.00
1 $0.814 $0.81

Inventory:6,191

*The price is for reference only.
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Overview of SI7623DN-T1-GE3

The SI7623DN-T1-GE3 is a 2.5A dual channel high-speed low-side power switch IC designed for various power management applications. It offers efficient and reliable control of high-side power in a compact and integrated package.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • IN1: Input for Channel 1
  • OUT1: Output for Channel 1
  • GND: Ground
  • EN1: Enable Control for Channel 1
  • IN2: Input for Channel 2
  • OUT2: Output for Channel 2
  • VCC: Supply Voltage
  • EN2: Enable Control for Channel 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7623DN-T1-GE3 IC for a visual representation.

Key Features

  • Dual 2.5A Low-Side Power Switch: Provides two independent channels for controlling low-side power up to 2.5A, suitable for a wide range of applications.
  • High Speed Operation: The SI7623DN-T1-GE3 offers high-speed switching for efficient power management in time-critical systems.
  • Enable Control: Each channel can be individually enabled or disabled using the EN1 and EN2 pins, providing flexibility in power distribution.
  • Compact Package: Available in a space-saving and thermally enhanced PowerPAK package, allowing for high power density designs.
  • Integrated Protection Features: Includes thermal shutdown and overcurrent protection for safe and reliable operation under various conditions.

Note: For detailed technical specifications, please refer to the SI7623DN-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as load switches and power distribution units.
  • Automotive Electronics: Suitable for automotive applications requiring efficient low-side power control.
  • Industrial Automation: Used in industrial automation and control systems for reliable and high-speed power switching.

Functionality

The SI7623DN-T1-GE3 is a dual-channel high-speed low-side power switch IC that provides efficient and robust control of low-side power in various electronic systems.

Usage Guide

  • Power Supply: Connect VCC (Pin 7) to the supply voltage within the specified operating range.
  • Input Connections: Apply the control signals to the IN1 and IN2 pins to control the respective channels.
  • Enable Control: Use the EN1 and EN2 pins to enable or disable the individual channels as needed.

Frequently Asked Questions

Q: What is the maximum current rating for each channel of the SI7623DN-T1-GE3?
A: Each channel of the SI7623DN-T1-GE3 can handle a maximum current of 2.5A, providing robust power switching capability.

Q: Does the SI7623DN-T1-GE3 include thermal protection?
A: Yes, this IC includes thermal shutdown protection to safeguard against excessive temperature conditions, ensuring device reliability.

Equivalent

For similar functionalities, consider these alternatives to the SI7623DN-T1-GE3:

  • SiP32401: A dual channel high-side power switch IC with similar high-speed and current rating characteristics to the SI7623DN-T1-GE3.
  • TPS272C45: This IC from Texas Instruments offers comparable features for efficient low-side power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-1212-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 3.1 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.5 V Qg - Gate Charge 180 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 52 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Brand Vishay Semiconductors Configuration Single
Fall Time 25 ns Forward Transconductance - Min 70 S
Product Type MOSFET Rise Time 38 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 82 ns
Typical Turn-On Delay Time 37 ns Unit Weight 0.032487 oz

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packageimg

SI7623DN-T1-GE3

P-channel 20V 35A Power MOSFET in 8-pin PowerPAK 1212 package, tape and reel

Inventory:

6,191