• SI7617DN-T1-GE3 PowerPAK-1212-8
SI7617DN-T1-GE3 PowerPAK-1212-8

SI7617DN-T1-GE3

A single-element P-channel power MOSFET crafted from silicon, engineered with a current handling capability of 13

Quantity Unit Price(USD) Ext. Price
1000 $0.284 $284.00
500 $0.300 $150.00
100 $0.379 $37.90
30 $0.426 $12.78
10 $0.475 $4.75
1 $0.573 $0.57

Inventory:7,575

*The price is for reference only.
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Submit your quote request for SI7617DN-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI7617DN-T1-GE3

The SI7617DN-T1-GE3 is a high-efficiency step-down voltage regulator IC designed for power management applications. This IC features a compact design and high performance, making it suitable for various voltage regulation tasks in electronic devices.

Pinout

(Note: The pin configuration provided below is a general representation. Refer to the specific datasheet for accurate details.)

  • VIN: Input Voltage
  • PGND: Power Ground
  • SW: Switching Node
  • FB: Feedback Pin
  • EN: Enable Pin
  • VOUT: Output Voltage
  • AGND: Analog Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and functionality of the SI7617DN-T1-GE3 IC for better understanding.

Key Features

  • High Efficiency: The SI7617DN-T1-GE3 offers high efficiency in converting input voltage to output voltage, minimizing power losses.
  • Wide Input Voltage Range: This IC can handle a wide range of input voltages, providing flexibility in system design.
  • Low Quiescent Current: With low quiescent current consumption, the SI7617DN-T1-GE3 is suitable for applications requiring power conservation.
  • Overcurrent Protection: Includes overcurrent protection to safeguard the regulator and connected components from damage.
  • Adjustable Output: The output voltage of the SI7617DN-T1-GE3 can be adjusted for different application requirements.

Note: For detailed technical specifications, please refer to the SI7617DN-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management tasks in electronic devices requiring efficient voltage regulation.
  • Battery-Powered Systems: Suitable for use in battery-powered systems where power efficiency is crucial.
  • IoT Devices: Commonly used in Internet of Things (IoT) devices for voltage regulation and power conservation.

Functionality

The SI7617DN-T1-GE3 is a step-down voltage regulator that efficiently converts input voltage to a stable output voltage suitable for powering various electronic components. It ensures reliable power management in diverse applications.

Usage Guide

  • Input Voltage: Connect VIN (Pin 1) to the input voltage source for the regulator to function correctly.
  • Output Voltage: Obtain the regulated output voltage from the VOUT (Pin 5) pin based on the desired application requirements.
  • Enable Control: Use the EN (Pin 4) pin to enable or disable the regulator as needed.

Frequently Asked Questions

Q: What is the typical efficiency of the SI7617DN-T1-GE3?
A: The SI7617DN-T1-GE3 offers high efficiency, typically above 90%, ensuring optimal power conversion.

Q: Can the SI7617DN-T1-GE3 handle input voltages outside the specified range?
A: It is recommended to operate the SI7617DN-T1-GE3 within the specified input voltage range for reliable performance and longevity of the IC.

Equivalent

For similar functionalities, consider these alternatives to the SI7617DN-T1-GE3:

  • LM7805: A classic linear voltage regulator IC with fixed 5V output for simpler voltage regulation tasks.
  • MP2315: A high-efficiency synchronous step-down converter IC suitable for compact power management solutions.

SI7617DN-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-1212-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 12.3 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 39 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 52 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Brand Vishay Semiconductors Configuration Single
Fall Time 9 ns, 12 ns Forward Transconductance - Min 35 S
Product Type MOSFET Rise Time 9 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 11 ns Part # Aliases SI7617DN-GE3
Unit Weight 0.032487 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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SI7617DN-T1-GE3

A single-element P-channel power MOSFET crafted from silicon, engineered with a current handling capability of 13

Inventory:

7,575
Overview of SI7617DN-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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