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SI7460DP-T1-E3

MOSFET N-Channel 60-V (Drain-Source), Fast Switching

Inventory:6,470

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Overview of SI7460DP-T1-E3

The SI7460DP-T1-E3 is a dual N-channel MOSFET IC designed for power management applications. It features low on-resistance and high-speed switching capability, making it ideal for use in DC-DC converters, battery protection circuits, and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate for MOSFET 1
  • S1: Source for MOSFET 1
  • D1: Drain for MOSFET 1
  • G: Gate for MOSFET 2
  • S2: Source for MOSFET 2
  • D2: Drain for MOSFET 2
  • VS: Voltage Sense Pin
  • IN: Input Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7460DP-T1-E3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFETs: Provides two independent N-channel MOSFETs for versatile power management.
  • Low On-Resistance: The SI7460DP-T1-E3 offers low on-resistance to minimize power losses and improve efficiency.
  • High-Speed Switching: With its high-speed switching capability, this IC is suitable for applications requiring fast response times.
  • Overcurrent Protection: Includes overcurrent protection features to safeguard connected components from damage.
  • Wide Voltage Range: Operates within a wide voltage range, making it compatible with a variety of power systems.

Note: For detailed technical specifications, please refer to the SI7460DP-T1-E3 datasheet.

Application

  • DC-DC Converters: Ideal for use in DC-DC converter circuits for voltage regulation and power conversion.
  • Battery Protection: Suitable for battery protection applications in portable electronic devices and automotive systems.
  • Motor Control: Can be utilized in motor control systems for efficient and controlled operation.

Functionality

The SI7460DP-T1-E3 dual N-channel MOSFET IC is designed to manage power efficiently in various electronic systems. It offers reliable switching capabilities and low on-resistance for optimized performance.

Usage Guide

  • Power Connections: Connect input power to the respective source pins and use the gate pins for controlling the MOSFETs.
  • Voltage Sensing: Utilize the voltage sense pin for monitoring voltage levels in the connected circuit.
  • Protection Features: Take advantage of the overcurrent protection by ensuring safe operating conditions.

Frequently Asked Questions

Q: Can the SI7460DP-T1-E3 be used in high-frequency switching applications?
A: Yes, the SI7460DP-T1-E3 is designed for high-speed switching operations in power management circuits.

Equivalent

For similar functionalities, consider these alternatives to the SI7460DP-T1-E3:

  • SI7462DP-T1-E3: A dual N-channel MOSFET IC with slightly different specifications for specific application requirements.
  • SI7460DN-T1-GE3: This MOSFET IC offers similar dual N-channel functionality with enhanced features for advanced power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 9.6 mOhms
Vgs - Gate-Source Voltage + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 100 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 5.4 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 30 ns
Forward Transconductance - Min 60 S Product Type MOSFET
Rise Time 16 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 20 ns
Part # Aliases SI7460DP-T1 Unit Weight 0.017870 oz

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packageimg

SI7460DP-T1-E3

MOSFET N-Channel 60-V (Drain-Source), Fast Switching

Inventory:

6,470