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SI7415DN-T1-GE3

P-Channel 60V (Drain-Source) MOSFET

Quantity Unit Price(USD) Ext. Price
1 $1.020 $1.02
10 $0.837 $8.37
30 $0.737 $22.11
100 $0.623 $62.30
500 $0.573 $286.50
1000 $0.550 $550.00

Inventory:6,128

*The price is for reference only.
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Overview of SI7415DN-T1-GE3

The SI7415DN-T1-GE3 is a dual-channel,low-side power switch IC designed for use in various power management applications.This IC features high current handling capacity and low ON-state resistance,making it ideal for controlling power distribution in electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • EN1:Enable Input for Channel 1
  • OUT1:Output for Channel 1
  • GND:Ground
  • IN1:Input for Channel 1
  • EN2:Enable Input for Channel 2
  • OUT2:Output for Channel 2
  • VCC:Positive Power Supply
  • IN2:Input for Channel 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7415DN-T1-GE3 IC for a visual representation.

Key Features

  • Dual-Channel Low-Side Power Switch:Provides two independent power switching channels for efficient power management.
  • High Current Handling Capacity:Capable of handling high currents,allowing for power control of various loads.
  • Low ON-State Resistance:Features low ON-state resistance for minimal power loss and efficient power distribution.
  • Enable Inputs:Includes enable inputs for each channel,providing control flexibility in power switching applications.
  • Overcurrent Protection:Offers overcurrent protection to prevent damage to the IC and connected devices in case of excessive current.

Note:For detailed technical specifications,please refer to the SI7415DN-T1-GE3 datasheet.

Application

  • Load Switching:Ideal for switching power to various loads in electronic systems,providing efficient power control.
  • Power Distribution:Suitable for power distribution and management applications in systems requiring independent channel control.
  • Battery-Powered Devices:Can be used in battery-powered devices for power switching and management functionalities.

Functionality

The SI7415DN-T1-GE3 is a dual-channel low-side power switch IC that enables efficient control of power distribution in electronic circuits.Its high current handling capacity and low ON-state resistance make it a reliable solution for power management applications.

Usage Guide

  • Power Supply:Connect VCC(Pin 7)to the positive power supply and GND(Pin 3)to ground.
  • Channel Control:Use EN1(Pin 1)and EN2(Pin 5)to enable or disable the power switches for Channel 1 and Channel 2.
  • Load Connection:Connect the loads to OUT1(Pin 2)and OUT2(Pin 6)for independent power switching control.

Frequently Asked Questions

Q:Does the SI7415DN-T1-GE3 provide thermal protection?
A:Yes,this IC includes thermal protection features to prevent overheating and ensure reliable operation.

Equivalent

For similar functionalities,consider these alternatives to the SI7415DN-T1-GE3:

  • SI7416DN-T1-GE3:Another dual-channel low-side power switch IC from Siliconix with similar features and performance.
  • SI4466DY-T1-GE3:A dual power switch IC offering comparable specifications to the SI7415DN-T1-GE3 for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-1212-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 5.7 A Rds On - Drain-Source Resistance 65 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 25 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.8 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 16 ns
Forward Transconductance - Min 11 S Height 1.04 mm
Length 3.3 mm Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 22 ns Typical Turn-On Delay Time 12 ns
Width 3.3 mm Part # Aliases SI7415DN-GE3
Unit Weight 0.032487 oz

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packageimg

SI7415DN-T1-GE3

P-Channel 60V (Drain-Source) MOSFET

Inventory:

6,128