• SI7336ADP-T1-E3 PowerPAK-SO-8
SI7336ADP-T1-E3 PowerPAK-SO-8

SI7336ADP-T1-E3

channel power MOSFET with 30A and 30V

Inventory:3,981

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Overview of SI7336ADP-T1-E3

The SI7336ADP-T1-E3 is a power field-effect transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The SI7336ADP-T1-E3 pinout refers to the configuration and function of each pin in its package type. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the SI7336ADP-T1-E3 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO EP T/R: The SI7336ADP-T1-E3 features a power field-effect transistor with a maximum voltage rating of 30V and a maximum current rating of 30A.
  • Power-efficient design: This component is designed to operate efficiently, minimizing energy consumption and heat generation.
  • High-speed switching capability: The SI7336ADP-T1-E3 can handle high-frequency signals, making it suitable for applications that require fast signal transitions.
  • Low-voltage operation: This component is designed to operate at low voltages, reducing the risk of damage or malfunction in applications with limited power supplies.
  • Small package size: The SI7336ADP-T1-E3 has a compact 8-pin PowerPAK SO EP T/R package that saves space and reduces material costs in your designs.

Applications

  • New product development: The SI7336ADP-T1-E3 can be used for new product development, enabling designers to create innovative systems with the benefits of low-power consumption and high-speed switching capabilities.
  • Upgrade your existing designs: This component can also be used to upgrade your existing design solutions, ensuring that they are more efficient, reliable, and scalable.
  • High-frequency applications: The SI7336ADP-T1-E3 is suitable for high-frequency applications such as audio amplifiers, video interfaces, or power converters.
  • Data communication systems: This component's high-speed switching capability also makes it suitable for data communication systems that require fast signal transitions and reliable transmission.

Advantages and Disadvantages

Advantages

  • Highly efficient power consumption: The SI7336ADP-T1-E3 is designed to minimize energy consumption, reducing heat generation and prolonging its lifespan.
  • Suitable for low-power applications: This component's low-voltage operation makes it suitable for applications that require low-power consumption or are subject to limited power supplies.
  • High-speed switching capability: The SI7336ADP-T1-E3 can handle high-frequency signals, enabling designers to create high-speed systems with minimal signal distortion.

Disadvantages

  • Risks of overheating: Operating the SI7336ADP-T1-E3 at too high a voltage or current may cause it to overheat, reducing its lifespan and performance capabilities.
  • Datasheet reference required for optimal use: To ensure that this component operates within specified parameters, designers must refer to the datasheet provided by the manufacturer to determine correct operating conditions and electrical characteristics.

Equivalents

For similar functionalities, consider these alternatives to the SI7336ADP-T1-E3:

  • Vishay's own equivalents: Vishay may offer their own equivalent versions of this component with different specifications or packaging configurations.
  • Competitors' products: Competing manufacturers may also offer similar components with comparable features and performances, offering designers alternative options for their designs.

SI7336ADP-T1-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 3 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 36 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 5.4 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Brand Vishay Semiconductors Configuration Single
Fall Time 32 ns Forward Transconductance - Min 110 S
Product Type MOSFET Rise Time 16 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N Channel Typical Turn-Off Delay Time 90 ns
Typical Turn-On Delay Time 24 ns Part # Aliases SI7336ADP-T1
Unit Weight 0.017870 oz

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SI7336ADP-T1-E3

channel power MOSFET with 30A and 30V

Inventory:

3,981