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SI7139DP-T1-GE3

MOSFET -30V Vds 20V Vgs PowerPAK SO-8

Quantity Unit Price(USD) Ext. Price
1000 $0.332 $332.00
500 $0.345 $172.50
100 $0.374 $37.40
30 $0.420 $12.60
10 $0.467 $4.67
1 $0.561 $0.56

Inventory:7,101

*The price is for reference only.
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Submit your quote request for SI7139DP-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI7139DP-T1-GE3

The SI7139DP-T1-GE3 is a dual N-channel MOSFET IC designed for power management applications.This IC features a low on-state resistance and high current capability,making it suitable for switching and amplification circuits in various electronic devices.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • GATE1:Gate terminal for MOSFET 1
  • SOURCE1:Source terminal for MOSFET 1
  • DRAIN1:Drain terminal for MOSFET 1
  • GATE2:Gate terminal for MOSFET 2
  • SOURCE2:Source terminal for MOSFET 2
  • DRAIN2:Drain terminal for MOSFET 2
  • VCC:Positive Power Supply
  • GND:Power Ground
  • EN:Enable Pin
  • VBAT:Battery Voltage Input

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7139DP-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFETs:The SI7139DP-T1-GE3 integrates two N-channel MOSFETs,providing flexibility in power management applications.
  • Low On-State Resistance:With its low on-state resistance,this IC minimizes power loss and heat generation in switching circuits.
  • High Current Capability:This IC can handle high continuous current levels,making it suitable for applications requiring power amplification.
  • Overcurrent Protection:Includes overcurrent protection features to safeguard the MOSFETs and connected components from damage.
  • Compact Package:Available in a space-saving package,ideal for designs with limited board space.

Note:For detailed technical specifications,please refer to the SI7139DP-T1-GE3 datasheet.

Application

  • Power Management Systems:The SI7139DP-T1-GE3 is suitable for use in power management systems for regulating and controlling power distribution.
  • Switching Circuits:Ideal for switching circuits in applications such as DC-DC converters and motor control systems.
  • Power Amplification:Used for power amplification in audio amplifiers and other high-power electronic devices.

Functionality

The SI7139DP-T1-GE3 is a dual N-channel MOSFET IC that provides efficient power switching and amplification capabilities.It is designed to deliver reliable performance in power management applications.

Usage Guide

  • Power Supply:Connect VCC(Pin 7)to the positive power supply and GND(Pin 8)to the power ground.
  • Control Inputs:Apply appropriate signals to the GATE1,GATE2,and EN pins to control the switching behavior of the MOSFETs.
  • Output Connections:Connect the DRAIN1 and DRAIN2 pins to the load or circuit requiring power amplification.

Frequently Asked Questions

Q:Can the SI7139DP-T1-GE3 be used in automotive applications?
A:Yes,the SI7139DP-T1-GE3 is suitable for automotive applications requiring efficient power management and switching capabilities.

Equivalent

For similar functionalities,consider these alternatives to the SI7139DP-T1-GE3:

  • SISA39DP-T1-GE3:A comparable dual N-channel MOSFET IC offering similar performance and features to the SI7139DP-T1-GE3.
  • SI7139DP-T2-GE3:An updated version of the SI7139DP-T1-GE3 with enhanced specifications for specific applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-SO-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 5.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 97 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 48 W Channel Mode Enhancement
Tradename TrenchFET Series SI7
Brand Vishay Semiconductors Configuration Single
Fall Time 24 ns Forward Transconductance - Min 54 S
Height 1.04 mm Length 6.15 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 56 ns
Typical Turn-On Delay Time 70 ns Width 5.15 mm
Part # Aliases SI7139DP-GE3 Unit Weight 0.017870 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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SI7139DP-T1-GE3

MOSFET -30V Vds 20V Vgs PowerPAK SO-8

Inventory:

7,101
Overview of SI7139DP-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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