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SI7111EDN-T1-GE3

Channel 30V 60A 8-Pin PowerPAK T/R

Inventory:5,418

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Overview of SI7111EDN-T1-GE3

The SI7111EDN-T1-GE3 is a dual N-channel MOSFET IC designed for power management applications. It features a compact package with two independent MOSFETs, offering high efficiency and reliability in controlling power flow.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G1: Gate terminal for MOSFET 1
  • S1: Source terminal for MOSFET 1
  • D1: Drain terminal for MOSFET 1
  • G2: Gate terminal for MOSFET 2
  • S2: Source terminal for MOSFET 2
  • D2: Drain terminal for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7111EDN-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFETs: Provides two independent MOSFETs for efficient power management.
  • High Efficiency: The SI7111EDN-T1-GE3 offers low ON-state resistance, resulting in minimal power loss during operation.
  • Compact Package: This IC comes in a space-saving package, ideal for applications with limited board space.
  • High Reliability: With robust construction, the IC ensures reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the SI7111EDN-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring efficient MOSFET control.
  • DC-DC Converters: Suitable for controlling power flow in DC-DC converter circuits.
  • Motor Control: Can be used in motor control applications for effective power regulation.

Functionality

The SI7111EDN-T1-GE3 features two independent N-channel MOSFETs that enable precise control over power flow in various applications. It offers high efficiency and reliability in power management tasks.

Usage Guide

  • Gate Connections: Connect the gate terminals (G1, G2) to the control signals for each MOSFET.
  • Source and Drain Connections: Establish the source (S1, S2) and drain (D1, D2) connections based on the circuit requirements.

Frequently Asked Questions

Q: What is the maximum current rating for each MOSFET in the SI7111EDN-T1-GE3?
A: The datasheet specifies the maximum current ratings for each MOSFET to ensure proper operation within the defined limits.

Q: Can the SI7111EDN-T1-GE3 handle high-frequency switching applications?
A: The SI7111EDN-T1-GE3 is designed to support high-frequency switching operations, providing flexibility in various power control scenarios.

Equivalent

For similar functionalities, consider these alternatives to the SI7111EDN-T1-GE3:

  • SIP41108DR: Another dual N-channel MOSFET IC offering similar performance characteristics for power management tasks.
  • SIDRIVE-2N1: This dual MOSFET module provides dual N-channel MOSFETs with enhanced efficiency and reliability.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case PowerPAK-1212-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 60 A
Rds On - Drain-Source Resistance 8.55 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.6 V Qg - Gate Charge 56.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 52 W Channel Mode Enhancement
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 33 ns
Forward Transconductance - Min 64 S Height 1.04 mm
Length 3.3 mm Product Type MOSFET
Rise Time 40 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 120 ns Typical Turn-On Delay Time 25 ns
Width 3.3 mm Unit Weight 0.032487 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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SI7111EDN-T1-GE3

Channel 30V 60A 8-Pin PowerPAK T/R

Inventory:

5,418
Overview of SI7111EDN-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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