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SI6562CDQ-T1-GE3

Trans MOSFET with 20V voltage rating and 5.7A/5.1A current rating, in an 8-pin TSSOP package on tape and reel

Inventory:7,525

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Overview of SI6562CDQ-T1-GE3

The SI6562CDQ-T1-GE3 is a dual N-channel MOSFET with Schottky diode, designed for power management applications. This IC features a low ON-resistance and high current carrying capability, making it suitable for various power conversion and switching tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate of MOSFET 1
  • D1: Drain of MOSFET 1
  • S1: Source of MOSFET 1
  • G: Gate of MOSFET 2
  • D2: Drain of MOSFET 2
  • S2: Source of MOSFET 2
  • C: Cathode of Schottky diode
  • A: Anode of Schottky diode


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI6562CDQ-T1-GE3 IC for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs in a single package for efficient power management.
  • Schottky Diode: Integrated Schottky diode for reverse current protection and fast switching.
  • Low ON-Resistance: The MOSFETs feature low ON-resistance for reduced power loss and improved efficiency.
  • High Current Capability: Capable of handling high currents, making it suitable for power conversion applications.
  • Compact Package: Available in a space-saving and thermally efficient package for easy integration.

Note: For detailed technical specifications, please refer to the SI6562CDQ-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management tasks such as voltage regulation, load switching, and battery charging.
  • DC-DC Converters: Suitable for use in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Can be used in motor control applications for driving and controlling motors.

Functionality

The SI6562CDQ-T1-GE3 combines dual N-channel MOSFETs with a Schottky diode to provide efficient power handling and control capabilities. It ensures reliable power management in various electronic systems.

Usage Guide

  • Gate Connections: Connect the gate pins G of MOSFETs 1 and 2 to the control signals for switching operations.
  • Drain and Source Connections: Connect the drain and source pins (D1, S1, D2, S2) as per the circuit requirements.
  • Schottky Diode: Utilize the Schottky diode for reverse current protection and fast switching applications.

Frequently Asked Questions

Q: What is the maximum current rating of the SI6562CDQ-T1-GE3?
A: The SI6562CDQ-T1-GE3 is capable of handling currents up to X amperes.

Q: Can the SI6562CDQ-T1-GE3 be used in high-frequency switching applications?
A: Yes, the SI6562CDQ-T1-GE3 features fast switching characteristics, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the SI6562CDQ-T1-GE3:

  • SI4562CDQ: A similar dual N-channel MOSFET without the Schottky diode feature for different application requirements.
  • SI6562BDQ: This variant offers similar performance to the SI6562CDQ-T1-GE3 with slight variations in specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case TSSOP-8
Transistor Polarity N-Channel, P-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 6.7 A, 6.1 A
Rds On - Drain-Source Resistance 22 mOhms, 30 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 600 mV Qg - Gate Charge 15 nC, 34 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.6 W, 1.7 W Channel Mode Enhancement
Tradename TrenchFET Series SI6
Brand Vishay Semiconductors Configuration Dual
Fall Time 10 ns, 15 ns Forward Transconductance - Min 17 S, 22 S
Product Type MOSFET Rise Time 10 ns, 25 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 25 ns, 45 ns
Typical Turn-On Delay Time 12 ns, 30 ns Part # Aliases SI6562CDQ-GE3
Unit Weight 0.005573 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SI6562CDQ-T1-GE3

Trans MOSFET with 20V voltage rating and 5.7A/5.1A current rating, in an 8-pin TSSOP package on tape and reel

Inventory:

7,525
Overview of SI6562CDQ-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

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·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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