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SI5486DU-T1-GE3

Compact N-channel power transistor for V, A applications

Inventory:5,266

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Overview of SI5486DU-T1-GE3

The SI5486DU-T1-GE3 is a dual N-channel enhancement mode MOSFET designed for high-speed switching applications in power electronics.This MOSFET features low on-resistance and fast switching characteristics,making it ideal for power management and voltage regulation circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • VSS:Ground
  • VCC:Positive Power Supply
  • EN:Enable Pin
  • FB:Feedback Pin
  • VOUT:Output Voltage
  • VIN:Input Voltage
  • GND:Power Ground


Circuit Diagram

Include a circuit diagram that illustrates the connections and operation of the SI5486DU-T1-GE3 MOSFET for a more visual representation.

Key Features

  • Dual N-Channel MOSFET: The SI5486DU-T1-GE3 integrates two N-channel MOSFETs, providing flexibility in power electronic designs.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power dissipation and heat generation in high-current applications.
  • Fast Switching Speed: The SI5486DU-T1-GE3 offers fast switching characteristics, enabling efficient power management in high-frequency circuits.
  • High Efficiency: This MOSFET ensures high efficiency in power conversion and regulation, contributing to overall system performance.
  • Wide Operating Voltage Range: Operates within a wide voltage range, supporting diverse power supply configurations.

Note: For detailed technical specifications, please refer to the SI5486DU-T1-GE3 datasheet.

Application

  • Power Electronics: Ideally suited for power electronics applications such as voltage regulators, motor control, and power inverters.
  • Switching Circuits: Used in high-speed switching circuits for efficient power delivery and control.
  • Power Management Systems: Integrated into power management systems for reliable voltage regulation and current control.

Functionality

The SI5486DU-T1-GE3 dual N-channel MOSFET enables high-speed switching and efficient power management in various electronic systems.It provides reliable performance in power control and regulation applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltages to turn the MOSFETs on and off smoothly.
  • Power Supply Connection: Connect VCC (Pin 5) to the positive power supply and VSS (Pin 4) to ground.
  • Load Connection: Connect the load to the drain-source terminals (D and S) of the MOSFETs.

Frequently Asked Questions

Q: Is the SI5486DU-T1-GE3 suitable for automotive applications?
A: Yes, the SI5486DU-T1-GE3 is designed to meet automotive-grade requirements and can be used in automotive power systems.

Equivalent

For similar functionalities, consider these alternatives to the SI5486DU-T1-GE3:

  • SI7468DP-T1-GE3: A similar dual N-channel MOSFET with enhanced features for high-power applications.
  • IXFK55N20A: This MOSFET offers comparable performance and characteristics to the SI5486DU-T1-GE3 for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-ChipFET-8 Tradename TrenchFET
Series SI54 Brand Vishay / Siliconix
Height 0.75 mm Length 3 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 1.8 mm
Part # Aliases SI5486DU-GE3 Unit Weight 0.010582 oz

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SI5486DU-T1-GE3

Compact N-channel power transistor for V, A applications

Inventory:

5,266