• SI4925BDY-T1-E3 Package
SI4925BDY-T1-E3 Package

SI4925BDY-T1-E3

In Stock:6,367

SI4925BDY-T1-E3 is a high-quality FET, MOSFET Arrays from VISHAY with a operating temperature range of - 55 C ~ + 150 C

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Submit your quote request for SI4925BDY-T1-E3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity P-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 7.1 A
Rds On - Drain-Source Resistance 25 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 50 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Dual
Fall Time 34 ns Forward Transconductance - Min 20 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 2 P-Channel Typical Turn-Off Delay Time 60 ns
Typical Turn-On Delay Time 9 ns Width 3.9 mm
Part # Aliases SI4925BDY-T1 Unit Weight 0.006596 oz

Overview of SI4925BDY-T1-E3

The SI4925BDY-T1-E3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-power switching applications. This MOSFET features a low on-state resistance and high current handling capability, making it suitable for various power management tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for gate signal
  • Drain (D1): Output for drain 1
  • Source (S1): Common source for drain 1 and drain 2
  • Drain (D2): Output for drain 2
  • Source (S2): Common source for drain 1 and drain 2
  • GND: Power ground
  • VCC: Positive power supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4925BDY-T1-E3 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Features two N-channel MOSFETs in a single package for enhanced switching capabilities.
  • Low On-State Resistance: The SI4925BDY-T1-E3 offers low on-state resistance for efficient power management.
  • High Current Handling: Capable of handling high currents, making it suitable for power switching applications.
  • Enhanced Power Efficiency: Provides high power efficiency due to its low RDS(on) characteristics.
  • Wide Operating Voltage Range: Operates within a broad voltage range, catering to various power supply configurations.

Note: For detailed technical specifications, please refer to the SI4925BDY-T1-E3 datasheet.

Application

  • Power Management: Ideal for power switching applications in DC-DC converters, motor control, and voltage regulation circuits.
  • Electronic Load Switching: Suitable for electronic load switching tasks requiring high current handling capabilities.
  • Battery Protection: Can be used in battery protection circuits for controlling the flow of current.

Functionality

The SI4925BDY-T1-E3 dual N-channel MOSFET is designed to facilitate high-current switching operations with low on-state resistance, ensuring efficient power management in various applications.

Usage Guide

  • Gate Signal: Apply the gate signal to the G pin to control the switching operation of the MOSFET.
  • Drain Connections: Connect the drain outputs (D1 and D2) to the respective loads for power switching.
  • Power Supply: Connect VCC (Pin 7) to the positive power supply and GND (Pin 6) to the power ground.

Equivalent

For similar functionalities, consider these alternatives to the SI4925BDY-T1-E3:

  • SI4955DY-T1-E3: This dual N-channel MOSFET offers comparable performance with slight variations in specifications.
  • FDS8958A: A dual N-channel MOSFET with similar characteristics, suitable for high-power switching applications.

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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SI4925BDY-T1-E3 Package

SI4925BDY-T1-E3

Transistor MOSFET P-channel with a 30V voltage rating and a maximum current of 5.3A, packaged in an 8-pin SOIC

Inventory:

6,367
Specifications Overview of SI4925BDY-T1-E3 Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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Payment

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