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SI4840BDY-T1-E3

SOIC-8 Surface Mount Power Mosfet with 9 mOhm resistance at 40 V

Quantity Unit Price(USD) Ext. Price
1 $1.238 $1.24
10 $1.075 $10.75
30 $0.985 $29.55
100 $0.884 $88.40
500 $0.839 $419.50
1000 $0.819 $819.00

Inventory:8,185

*The price is for reference only.
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Overview of SI4840BDY-T1-E3

The SI4840BDY-T1-E3 is an N-channel MOSFET transistor designed for use in various electronic circuits. It features a low on-resistance and high-speed switching capability, making it suitable for power management and switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Controls the voltage applied to the MOSFET
  • Drain: Connects to the load and the power supply
  • Source: Connected to ground or the common reference point
  • Body: Substrate connection for improved performance

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4840BDY-T1-E3 for a visual representation.

Key Features

  • Low On-Resistance: The SI4840BDY-T1-E3 offers a low on-resistance, reducing power loss and improving efficiency.
  • High-Speed Switching: This MOSFET transistor enables high-speed switching operations, suitable for various power management applications.
  • Low Gate Threshold Voltage: The low gate threshold voltage ensures compatibility with a wide range of driving circuits.
  • Enhanced Thermal Performance: The body connection aids in improved thermal performance and reliability.

Note: For detailed technical specifications, please refer to the SI4840BDY-T1-E3 datasheet.

Application

  • Power Management: Ideal for use in power management circuits and DC-DC converters.
  • Switching Circuits: Suitable for high-speed switching applications in various electronic systems.
  • Motor Control: Can be utilized in motor control and drive circuits for efficient power switching.

Functionality

The SI4840BDY-T1-E3 N-channel MOSFET transistor is designed for high-speed switching and power management applications, providing efficient and reliable performance in electronic circuits.

Usage Guide

  • Gate Connection: Apply the control voltage to the gate terminal to control the conduction of the MOSFET.
  • Load Connection: Connect the load and power supply to the drain terminal of the MOSFET.
  • Ground Connection: The source terminal is connected to ground or the common reference point in the circuit.

Frequently Asked Questions

Q: Is the SI4840BDY-T1-E3 suitable for high-frequency applications?
A: Yes, the high-speed switching capability of the SI4840BDY-T1-E3 makes it suitable for high-frequency applications in power management and switching circuits.

Equivalent

For similar functionalities, consider these alternatives to the SI4840BDY-T1-E3:

  • SI2314DS-T1-GE3: This N-channel MOSFET transistor offers similar high-speed switching characteristics and low on-resistance for power management applications.
  • AON6414A: An alternative MOSFET transistor with comparable features, suitable for power switching and management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 19 A
Rds On - Drain-Source Resistance 9 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 50 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 6 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Single
Fall Time 10 ns Forward Transconductance - Min 56 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 10 ns Width 3.9 mm
Part # Aliases SI4840BDY-E3 Unit Weight 0.006596 oz

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SI4840BDY-T1-E3

SOIC-8 Surface Mount Power Mosfet with 9 mOhm resistance at 40 V

Inventory:

8,185