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SI4559EY

N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET with 0.055ohm

Inventory:6,432

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Overview of SI4559EY

The SI4559EY is a dual N-channel enhancement-mode field-effect transistor (FET) IC designed for use in a wide range of power management and switching applications. It features a low on-resistance and high-speed switching capability, making it suitable for power supply, load switch, and DC-DC converter designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for the FET
  • D: Drain terminal of the upper FET
  • S: Source terminal of the upper FET
  • G: Gate terminal for the lower FET
  • D: Drain terminal of the lower FET
  • S: Source terminal of the lower FET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4559EY IC for a visual representation.

Key Features

  • Dual N-Channel FET: Provides two N-channel FETs in a single package for efficient power management and switching.
  • Low On-Resistance: The SI4559EY features low on-resistance to minimize power dissipation and improve efficiency.
  • High-Speed Switching: Capable of high-speed switching operations, making it suitable for fast-switching applications.
  • Wide Operating Voltage Range: Operates within a wide voltage range, allowing flexibility in various power management designs.
  • Compact Package: Available in a space-saving and thermally efficient package for integration into compact designs.

Note: For detailed technical specifications, please refer to the SI4559EY datasheet.

Application

  • Power Supply Designs: Ideal for use in power supply circuits, such as buck converters, boost converters, and voltage regulators.
  • Load Switching: Suitable for load switch applications, providing efficient control of power to different loads.
  • DC-DC Converters: Used in DC-DC converter designs for voltage regulation and power conversion.

Functionality

The SI4559EY is a dual N-channel FET designed for efficient power management and high-speed switching operations. It is a reliable component for various power-related applications in electronic circuits.

Usage Guide

  • Gate Voltage: Apply the appropriate gate voltage to control the switching of the FETs.
  • Load Connection: Connect the load to the drain terminals of the FETs for power management.
  • Input Power: Provide the necessary input power to the source terminals of the FETs based on the application requirements.

Frequently Asked Questions

Q: Can the SI4559EY be used for high-frequency switching applications?
A: Yes, the SI4559EY is capable of high-speed switching and can be used in high-frequency applications with appropriate design considerations.

Equivalent

For similar functionalities, consider these alternatives to the SI4559EY:

  • SI4562DY: This is a similar dual N-channel FET from Siliconix, offering comparable performance and characteristics to the SI4559EY.
  • IRF7319: An N-channel FET IC from Infineon Technologies, providing similar power management and switching capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Tradename TrenchFET
Series SI4 Brand Vishay / Siliconix
Product Type MOSFET Factory Pack Quantity 100
Subcategory MOSFETs Unit Weight 0.002998 oz

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SI4559EY

N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET with 0.055ohm

Inventory:

6,432