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SI4500BDY

Silicon Metal-Oxide Semiconductor Field-Effect Transistor (SO-8) featuring 6

Inventory:8,484

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Overview of SI4500BDY

The SI4500BDY is a p-channel TrenchFET power MOSFET designed for use in power management applications. It features a low on-resistance and fast switching performance, making it suitable for high-efficiency DC-DC converters and load switching.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate connection for controlling the MOSFET
  • SOURCE: Source terminal for the MOSFET
  • DRAIN: Drain terminal for the MOSFET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4500BDY MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SI4500BDY offers a low on-resistance for reduced conduction losses in power applications.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, enabling efficient power conversion.
  • High Efficiency: Suitable for high-efficiency DC-DC converters and load switching applications.
  • Compact Package: Available in a space-saving and thermally efficient D2PAK package.

Note: For detailed technical specifications, please refer to the SI4500BDY datasheet.

Application

  • Power Management: Ideal for use in power management systems, such as voltage regulation and power conversion.
  • DC-DC Converters: Suitable for high-efficiency DC-DC converter circuits in various electronic devices.
  • Load Switching: Used in load switching applications to control power delivery to different components or subsystems.

Functionality

The SI4500BDY is a p-channel TrenchFET power MOSFET designed for efficient power management and switching applications. It offers low on-resistance and high performance for improved power delivery and conversion.

Usage Guide

  • Gate Control: Connect the GATE pin to the appropriate gate driver for controlling the MOSFET.
  • Power Connections: Connect the SOURCE and DRAIN pins to the circuitry as per the application requirements.

Frequently Asked Questions

Q: What is the typical on-resistance of the SI4500BDY?
A: The SI4500BDY typically has an on-resistance of X ohms at Y volts.

Q: Can the SI4500BDY be used in high-frequency switching applications?
A: Yes, the fast switching speed of the SI4500BDY makes it suitable for high-frequency switching in power circuits.

Equivalent

For similar functionalities, consider these alternatives to the SI4500BDY:

  • SI4390DY: This is another p-channel TrenchFET MOSFET offering similar performance characteristics in a different package.
  • FDN327N: A comparable p-channel MOSFET designed for power management and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Tradename TrenchFET Brand Vishay / Siliconix
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Subcategory MOSFETs
Width 3.9 mm Unit Weight 0.006596 oz

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SI4500BDY

Silicon Metal-Oxide Semiconductor Field-Effect Transistor (SO-8) featuring 6

Inventory:

8,484