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SI4470EY-T1-E3

N-Channel MOSFETs 60 Volt 12.7A 3.75W

Inventory:6,854

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Overview of SI4470EY-T1-E3

The SI4470EY-T1-E3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-frequency and high-power applications. This transistor features a low on-resistance and fast switching capabilities, making it suitable for use in power amplifiers, RF circuits, and other demanding electronic applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for controlling the conductivity of the MOSFET.
  • D: Drain terminal through which the current flows in and out of the MOSFET.
  • S: Source terminal connecting to the ground reference of the circuit.
  • B: Body terminal used for substrate biasing in certain applications.

Circuit Diagram

Include a circuit diagram demonstrating the connections and usage of the SI4470EY-T1-E3 MOSFET in electronic circuits.

Key Features

  • High Frequency Capability: The SI4470EY-T1-E3 can operate at high frequencies, making it suitable for RF applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power losses and improves efficiency.
  • Fast Switching Speed: The fast switching speed of the SI4470EY-T1-E3 allows for rapid transitions between on and off states.
  • High Power Handling: This transistor can handle high power levels, making it ideal for power amplification tasks.
  • Temperature Stability: The SI4470EY-T1-E3 exhibits good temperature stability, ensuring reliable performance across varying operating conditions.

Note: For detailed technical specifications, please refer to the SI4470EY-T1-E3 datasheet.

Application

  • Power Amplifiers: Ideal for use in power amplifier circuits due to its high-power handling capabilities.
  • RF Circuits: Suitable for RF applications such as radio frequency amplification and signal processing.
  • Switching Circuits: Can be used in high-speed switching circuits for various electronic devices.

Functionality

The SI4470EY-T1-E3 MOSFET is a high-performance transistor that offers low on-resistance and fast switching speeds, making it well-suited for high-frequency and high-power applications requiring efficient and reliable performance.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal (G) to control the conductivity of the MOSFET.
  • Drain-Source Connection: Connect the load circuit between the drain (D) and source (S) terminals for current flow.
  • Ground Connection: Ensure a proper ground connection by connecting the source terminal (S) to the circuit's ground reference.

Frequently Asked Questions

Q: Is the SI4470EY-T1-E3 suitable for high-frequency applications?
A: Yes, the SI4470EY-T1-E3 is designed to operate at high frequencies, making it suitable for RF circuits and other high-speed applications.

Equivalent

For similar functionalities, consider these alternatives to the SI4470EY-T1-E3:

  • IRF540N: A power MOSFET with comparable performance characteristics suitable for power electronics applications.
  • IXTH50N20: This MOSFET offers similar high-power handling capabilities and fast switching speeds for demanding electronic designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Tradename TrenchFET
Series SI4 Brand Vishay / Siliconix
Product Type MOSFET Factory Pack Quantity 2500
Subcategory MOSFETs Part # Aliases SI4470EY-E3
Unit Weight 0.017870 oz

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SI4470EY-T1-E3

N-Channel MOSFETs 60 Volt 12.7A 3.75W

Inventory:

6,854