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SI4463BDY-T1-E3

N-channel MOSFET with a voltage rating of 20V, current rating of 13.7A, and on-resistance of 0.011Ohm

Inventory:7,470

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Overview of SI4463BDY-T1-E3

The SI4463BDY-T1-E3 is a high-performance, multi-band sub-GHz wireless transceiver IC designed for industrial, automotive, and consumer applications. It offers unmatched flexibility and performance for reliable wireless communication in various environments.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GPIO0: General-purpose digital I/O pin 0
  • GPIO1: General-purpose digital I/O pin 1
  • GPIO2: General-purpose digital I/O pin 2
  • GPIO3: General-purpose digital I/O pin 3
  • GND: Ground connection
  • SCK: SPI serial clock
  • MISO: SPI master-in-slave-out data
  • MOSI: SPI master-out-slave-in data
  • CSn: SPI chip select
  • SDN: Shutdown pin
  • ANT: Antenna connection
  • VDD: Positive power supply
  • XTAL: External crystal oscillator connection
  • PA: Power amplifier output
  • AGND: Analog ground connection
  • DIGVDD: Digital power supply
  • GPIO[3:0]_CONFIG: General-purpose digital I/O configuration

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4463BDY-T1-E3 IC for a visual representation.

Key Features

  • Multi-Band Operation: Supports operation in multiple frequency bands for versatile wireless communication.
  • High Performance: Offers high sensitivity and output power for reliable long-range communication.
  • Low Power Consumption: Features low current consumption for energy-efficient applications.
  • Flexible Configuration: Provides extensive configuration options for customizing the transceiver's behavior.
  • Integrated RF Switch: Includes an integrated RF switch for simplified antenna switching.
  • Wide Operating Temperature Range: Suitable for use in harsh environmental conditions with a wide temperature range.

Note: For detailed technical specifications, please refer to the SI4463BDY-T1-E3 datasheet.

Application

  • Wireless Sensor Networks: Ideal for building wireless sensor networks for industrial and smart city applications.
  • Remote Monitoring Systems: Suitable for remote monitoring and control systems in automotive and industrial settings.
  • Home Automation: Used in home automation systems for wireless connectivity and control.

Functionality

The SI4463BDY-T1-E3 is a versatile multi-band sub-GHz wireless transceiver that provides high performance and flexibility for a wide range of wireless applications, from industrial to consumer electronics.

Usage Guide

  • Power Supply: Connect VDD (Pin 12) to the positive power supply within the specified voltage range.
  • Antenna Connection: Connect the antenna to the ANT pin for optimal wireless performance.
  • Configuration: Utilize the GPIO pins and SPI interface for configuring the transceiver as per the application requirements.

Frequently Asked Questions

Q: What is the maximum range of the SI4463BDY-T1-E3 transceiver?
A: The SI4463BDY-T1-E3 offers reliable long-range communication, with the actual range depending on environmental factors and antenna design.

Q: Can the SI4463BDY-T1-E3 operate in automotive applications?
A: Yes, the SI4463BDY-T1-E3 is suitable for automotive applications, providing robust wireless connectivity and performance.

Equivalent

For similar functionalities, consider these alternatives to the SI4463BDY-T1-E3:

  • SI4463-B1B-FM: A variant of the SI4463 series with similar performance and features, designed for specific frequency modulation applications.
  • CC1101: This is a low-cost sub-1 GHz transceiver from Texas Instruments, offering comparable features to the SI4463BDY-T1-E3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 13.7 A
Rds On - Drain-Source Resistance 20 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.4 V Qg - Gate Charge 56 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Single
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Factory Pack Quantity 2500
Subcategory MOSFETs Width 3.9 mm
Part # Aliases SI4463BDY-E3 Unit Weight 0.006596 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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SI4463BDY-T1-E3

N-channel MOSFET with a voltage rating of 20V, current rating of 13.7A, and on-resistance of 0.011Ohm

Inventory:

7,470
Overview of SI4463BDY-T1-E3 Specifications Warranty & Returns Similar Products Popular Products

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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