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SI4447DY-T1-E3

This ROHS-compliant MOSFET has a maximum power dissipation of 1

Quantity Unit Price(USD) Ext. Price
100 $0.159 $15.90
30 $0.162 $4.86
10 $0.164 $1.64
1 $0.167 $0.17

Inventory:9,687

*The price is for reference only.
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Submit your quote request for SI4447DY-T1-E3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI4447DY-T1-E3

The SI4447DY-T1-E3 is a P-channel MOSFET transistor designed for use in power management and switching applications. It features a low on-resistance and high switching speed, making it suitable for high-efficiency power conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4447DY-T1-E3 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SI4447DY-T1-E3 offers a low on-resistance, reducing power losses and improving efficiency in power management applications.
  • High Switching Speed: This MOSFET transistor provides high-speed switching capabilities, suitable for applications requiring rapid switching.
  • High Voltage Rating: With a high voltage rating, the SI4447DY-T1-E3 can handle high-power applications with ease.
  • Enhanced Thermal Performance: The transistor's package design ensures efficient heat dissipation, contributing to its reliability in operation.

Note: For detailed technical specifications, please refer to the SI4447DY-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices.
  • Switching Circuits: Suitable for use in high-speed switching circuits for efficient power control.
  • Voltage Regulators: Can be used in voltage regulator circuits to regulate and control the output voltage.

Functionality

The SI4447DY-T1-E3 P-channel MOSFET transistor is designed to control power flow in electronic circuits efficiently. It offers low on-resistance and high-speed switching, making it a reliable component for power applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the controlling signal for switching the transistor.
  • Drain-S ource Connection: Connect the drain (D) and source (S) pins as per the circuit requirements for power flow control.

Frequently Asked Questions

Q: Can the SI4447DY-T1-E3 be used in high-frequency applications?
A: Yes, the high switching speed of the SI4447DY-T1-E3 enables its use in high-frequency applications with efficiency.

Equivalent

For similar functionalities, consider these alternatives to the SI4447DY-T1-E3:

  • SI4410DY-T1-E3: A P-channel MOSFET with similar characteristics, suitable for power management applications.
  • AUIRFU8409: This MOSFET transistor offers comparable performance to the SI4447DY-T1-E3 for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 4.5 A
Rds On - Drain-Source Resistance 54 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 2.2 V Qg - Gate Charge 14 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Single
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Factory Pack Quantity 2500
Subcategory MOSFETs Width 3.9 mm
Part # Aliases SI4447DY-E3 Unit Weight 0.006596 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SI4447DY-T1-E3

This ROHS-compliant MOSFET has a maximum power dissipation of 1

Inventory:

9,687
Overview of SI4447DY-T1-E3 Specifications Warranty & Returns Similar Products Popular Products

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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