• SI4401BDY-T1-E3 SOIC-8
SI4401BDY-T1-E3 SOIC-8

SI4401BDY-T1-E3

Unipolar Transistor

Inventory:4,454

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Overview of SI4401BDY-T1-E3

The SI4401BDY-T1-E3 is an N-channel MOSFET transistor designed for high-speed switching applications. This transistor features a low on-resistance and high current capability, making it suitable for various power management and voltage regulation tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4401BDY-T1-E3 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The SI4401BDY-T1-E3 offers fast switching speeds, making it suitable for applications requiring rapid on/off transitions.
  • Low On-Resistance: With a low RDS(on) value, this MOSFET minimizes power loss and heat generation during operation.
  • High Current Capability: The transistor can handle high currents, providing robust performance in power electronics applications.
  • Enhanced Efficiency: By reducing conduction losses, the SI4401BDY-T1-E3 improves overall system efficiency and performance.

Note: For detailed technical specifications, please refer to the SI4401BDY-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management tasks such as voltage regulation, battery charging, and DC-DC conversion.
  • Switching Circuits: Suitable for use in high-speed switching circuits, motor control, and LED lighting applications.
  • Voltage Regulation: Can be utilized in voltage regulators, power supplies, and inverters for efficient voltage control.

Functionality

The SI4401BDY-T1-E3 MOSFET transistor is designed for efficient and reliable high-speed switching operations. It enables precise control over current flow in various electronic circuits, ensuring optimal performance.

Usage Guide

  • Gate Driving: Apply appropriate voltage levels to the gate terminal for proper switching operation.
  • Load Connection: Connect the load to the drain terminal, ensuring proper current flow according to the circuit requirements.
  • Heat Dissipation: Implement adequate heat sinking solutions to manage the heat generated during high-current applications.

Frequently Asked Questions

Q: Is the SI4401BDY-T1-E3 suitable for pulse-width modulation (PWM) applications?
A: Yes, the fast switching speed and low on-resistance make the SI4401BDY-T1-E3 ideal for PWM control in various circuits.

Equivalent

For similar functionalities, consider these alternatives to the SI4401BDY-T1-E3:

  • IRF540: An N-channel power MOSFET with comparable specifications for high-power applications.
  • BSC010N04LS G: This MOSFET offers similar performance characteristics to the SI4401BDY-T1-E3 for switching applications.

SI4401BDY-T1-E3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOIC-8
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 10.5 A
Rds On - Drain-Source Resistance 14 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 40 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.9 W Channel Mode Enhancement
Tradename TrenchFET Series SI4
Brand Vishay Semiconductors Configuration Single
Fall Time 47 ns Forward Transconductance - Min 26 S
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 97 ns
Typical Turn-On Delay Time 16 ns Part # Aliases SI4401BDY-E3
Unit Weight 0.026455 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SI4401BDY-T1-E3

Unipolar Transistor

Inventory:

4,454
Overview of SI4401BDY-T1-E3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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