• SI2371EDS-T1-GE3 SOT23-3
SI2371EDS-T1-GE3 SOT23-3

SI2371EDS-T1-GE3

MOSFET -30V Vds 12V Vgs SOT-23

Inventory:3,821

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Overview of SI2371EDS-T1-GE3

The SI2371EDS-T1-GE3 is a P-channel enhancement mode field-effect transistor (FET) designed for power management applications in electronic circuits. This transistor offers low on-state resistance and high current-carrying capability, making it suitable for various power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • Sense: Current Sensing Pin
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2371EDS-T1-GE3 FET for a visual representation.

Key Features

  • P-Channel Enhancement Mode FET: The SI2371EDS-T1-GE3 features a P-channel FET design for efficient power management.
  • Low On-State Resistance: This transistor offers low resistance to minimize power loss and heat generation.
  • High Current Capability: With its high current-carrying capacity, the SI2371EDS-T1-GE3 can handle substantial power loads.
  • Fast Switching Speed: The FET provides fast switching characteristics for responsive power control.
  • ESD Protection: Includes built-in Electrostatic Discharge (ESD) protection for enhanced reliability in ESD-prone environments.

Note: For detailed technical specifications, please refer to the SI2371EDS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power switching, battery charging, and LED driving applications.
  • DC-DC Converters: Suitable for use in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Can be used in motor control applications to regulate motor speed and direction.

Functionality

The SI2371EDS-T1-GE3 is a P-channel FET that enables effective power management in various electronic systems. It provides reliable power switching and amplification capabilities for enhanced circuit performance.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the control circuit for switching the FET.
  • Drain and Source: Connect the Drain (D) and Source (S) pins based on the desired direction of current flow.
  • Current Sensing: Utilize the Sense pin for current monitoring and protection.

Frequently Asked Questions

Q: Is the SI2371EDS-T1-GE3 suitable for high-frequency applications?
A: Yes, the SI2371EDS-T1-GE3 offers fast switching speeds, making it suitable for high-frequency operations.

Equivalent

For similar functionalities, consider these alternatives to the SI2371EDS-T1-GE3:

  • SIP32431DNP-T1-GE4: An alternative P-channel FET with enhanced power handling capabilities.
  • SIB433EDK-T1-GE3: This FET offers similar performance characteristics to the SI2371EDS-T1-GE3 in a different package.
  • SIMB20N03S-6R8: A power MOSFET with comparable specifications for power management applications.

SI2371EDS-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4.8 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 10.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.7 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 52 ns
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 52 ns
Typical Turn-On Delay Time 28 ns Part # Aliases SI2371EDS-T1-BE3
Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SI2371EDS-T1-GE3

MOSFET -30V Vds 12V Vgs SOT-23

Inventory:

3,821
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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