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SI2343CDS-T1-GE3 is a high-quality Single FETs, MOSFETs from VISHAY with a operating temperature range of - 55 C ~ + 150 C
Part Number : SI2343CDS-T1-GE3
Package/Case : SOT23-3
Manufacturer : VISHAY
Components Classification : Single FETs, MOSFETs
DataSheet : SI2343CDS-T1-GE3 DataSheet (PDF)
Series : SI2
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 500 | $0.079 | $39.50 |
| 5 | $0.145 | $0.72 |
| 50 | $0.117 | $5.85 |
| 150 | $0.105 | $15.75 |
| 3000 | $0.073 | $219.00 |
| 6000 | $0.069 | $414.00 |
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 45 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 7 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI2 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 8 ns |
| Product Type | MOSFET | Rise Time | 10 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 8 ns | Part # Aliases | SI2343CDS-T1-BE3 SI2343CDS-GE3 |
| Unit Weight | 0.000282 oz |
The SI2343CDS-T1-GE3 is a P-channel MOSFET transistor designed for use in power management and switching applications. This transistor features a low on-resistance and high load capacity, making it ideal for various electronic circuits requiring efficient power control. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2343CDS-T1-GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI2343CDS-T1-GE3 datasheet. Functionality The SI2343CDS-T1-GE3 P-channel MOSFET transistor is designed for efficient power control with its low on-resistance and high load capacity. It ensures reliable performance in power management and switching applications. Usage Guide Q: Is the SI2343CDS-T1-GE3 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the SI2343CDS-T1-GE3:Overview of SI2343CDS-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI2343CDS-T1-GE3 is designed for low- to moderate-frequency switching applications. For high-frequency requirements, consider alternatives with faster switching speeds.Equivalent
Warranty, Returns, and Additional Information
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Inventory:
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