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SI2338DS-T1-GE3

Vishay Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23

Inventory:5,740

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Overview of SI2338DS-T1-GE3

The SI2338DS-T1-GE3 is an N-channel MOSFET transistor designed for use in electronic switching applications. It features a compact size and high efficiency, making it suitable for various power management and conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2338DS-T1-GE3 MOSFET for a visual representation.

Key Features

  • N-Channel MOSFET: The SI2338DS-T1-GE3 is an N-channel MOSFET transistor suitable for high-side switch applications.
  • Compact Size: With its small form factor, this MOSFET can be easily integrated into compact electronic devices.
  • High Efficiency: The SI2338DS-T1-GE3 offers high efficiency in power conversion and management applications.
  • Low On-Resistance: This MOSFET features low on-resistance for minimal power loss during operation.

Note: For detailed technical specifications, please refer to the SI2338DS-T1-GE3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring efficient switching capabilities.
  • DC-DC Converters: Suitable for DC-DC converter circuits where high efficiency and low power loss are essential.
  • Electronic Switching: Used in various electronic switching applications for controlling power flow.

Functionality

The SI2338DS-T1-GE3 N-channel MOSFET transistor is designed to provide efficient and reliable switching functionality in electronic circuits, ensuring effective power management and control.

Usage Guide

  • Gate Control: Apply the appropriate voltage signals to the Gate pin for switching the MOSFET.
  • Drain Connection: Connect the load to the Drain pin of the MOSFET.
  • Source Connection: Ground the Source pin for proper operation.

Frequently Asked Questions

Q: Is the SI2338DS-T1-GE3 suitable for high-frequency switching applications?
A: Yes, the SI2338DS-T1-GE3 is designed to handle high-frequency switching with minimal losses.

Equivalent

For similar functionalities, consider these alternatives to the SI2338DS-T1-GE3:

  • IRF3205: This is a power MOSFET with similar specifications and performance characteristics to the SI2338DS-T1-GE3.
  • FQP30N06L: Another N-channel MOSFET transistor suitable for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 4.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 7 ns
Product Type MOSFET Rise Time 11 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 3 ns Part # Aliases SI2338DS-T1-BE3 SI2338DS-GE3
Unit Weight 0.000282 oz

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packageimg

SI2338DS-T1-GE3

Vishay Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23

Inventory:

5,740