• SI2328DS-T1-E3 SOT23-3
SI2328DS-T1-E3 SOT23-3

SI2328DS-T1-E3

SOT-23 Power Mosfet featuring Single N-Channel, 100 V Rating, and 0.25 Ohms Resistance

Quantity Unit Price(USD) Ext. Price
1000 $0.192 $192.00
500 $0.201 $100.50
100 $0.216 $21.60
30 $0.250 $7.50
10 $0.277 $2.77
1 $0.340 $0.34

Inventory:3,968

*The price is for reference only.
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Overview of SI2328DS-T1-E3

The SI2328DS-T1-E3 is a dual N-channel MOSFET transistor designed for various electronic applications.This MOSFET features a low threshold voltage and high power handling capability,making it suitable for power management and switching circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • S:Source
  • D:Drain
  • VSS:Ground
  • VDD:Positive Power Supply
  • EN:Enable Pin
  • NC:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2328DS-T1-E3 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET:Provides two N-channel MOSFET transistors in a single package for enhanced circuit design flexibility.
  • Low Threshold Voltage:Features a low threshold voltage,allowing for efficient switching operations in low-voltage applications.
  • High Power Handling Capability:Capable of handling high power levels,making it suitable for power management circuits.
  • Fast Switching Speed:Offers fast switching speeds for rapid circuit response times.
  • Low On-Resistance:Provides low on-resistance for reduced power dissipation and improved efficiency.

Note:For detailed technical specifications,please refer to the SI2328DS-T1-E3 datasheet.

Application

  • Power Management:Ideal for power management circuits in electronic devices requiring efficient switching and control.
  • Switching Circuits:Suitable for use in various switching circuits for turning on/off power to different components or subsystems.
  • Motor Control:Can be used in motor control applications to regulate the speed and direction of motors.

Functionality

The SI2328DS-T1-E3 dual N-channel MOSFET transistor provides a versatile and reliable solution for power switching and control applications.It offers efficient performance and high power handling capabilities for electronic circuits.

Usage Guide

  • Gate Control:Apply appropriate voltage levels to the gate pin(G)to control the switching behavior of the MOSFET.
  • Power Connections:Connect the drain pin(D)to the load,source pin(S)to ground,and VDD(Pin)to the positive power supply.
  • Enable Function:Use the enable pin(EN)to enable or disable the operation of the MOSFET as needed.

Frequently Asked Questions

Q:Can the SI2328DS-T1-E3 be used for high-frequency applications?
A:Yes,the SI2328DS-T1-E3 offers fast switching speeds, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the SI2328DS-T1-E3:

  • IRF3205:A dual N-channel MOSFET with similar power handling capabilities and low on-resistance for power management applications.
  • FDD6637:A dual N-channel MOSFET transistor offering comparable performance characteristics to the SI2328DS-T1-E3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 1.15 A Rds On - Drain-Source Resistance 250 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 3.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 730 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 4 S Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Rise Time 11 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 9 ns Typical Turn-On Delay Time 7 ns
Width 1.6 mm Part # Aliases SI2328DS-T1-BE3 SI2328DS-E3
Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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SI2328DS-T1-E3

SOT-23 Power Mosfet featuring Single N-Channel, 100 V Rating, and 0.25 Ohms Resistance

Inventory:

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

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