• packageimg
packageimg

SI2308BDS-T1-GE3

SOT-23 packaged N-channel MOSFET capable of handling voltages up to 60V and currents up to 1.9A

Inventory:7,771

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SI2308BDS-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI2308BDS-T1-GE3

The SI2308BDS-T1-GE3 is a P-channel MOSFET transistor designed for high-speed switching applications. It has a low on-resistance and is suitable for use in power management circuits, battery chargers, and DC-DC converters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Drain (D): Connect to the load or output voltage
  • Gate (G): Control the switching behavior of the transistor
  • Source (S): Connect to the ground or negative voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2308BDS-T1-GE3 MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET Transistor: Designed for high-speed switching applications.
  • Low On-Resistance: Enables efficient power management and reduces power loss.
  • Suitable for Power Management Circuits: Ideal for use in power management circuits, battery chargers, and DC-DC converters.
  • Small Package: Available in a compact surface-mount SOT-23 package.
  • RoHS Compliant: Meets international standards for environmentally friendly manufacturing.
  • Temperature and Voltage Range: Operates within specified temperature and voltage range for reliable performance.

Note: For detailed technical specifications, please refer to the SI2308BDS-T1-GE3 datasheet.

Application

  • Power Management: Well-suited for power management circuits in various electronic devices.
  • Battery Chargers: Used in battery charging circuits to control the charging process efficiently.
  • DC-DC Converters: Enables the conversion of input voltage to a different output voltage level.

Functionality

The SI2308BDS-T1-GE3 P-channel MOSFET transistor allows for high-speed switching in power management circuits, battery chargers, and DC-DC converters. It provides efficient control over power flow and voltage regulation.

Usage Guide

  • Connection: Connect the drain (D) pin to the load or output voltage, the gate (G) pin to the controlling circuit, and the source (S) pin to the ground or negative voltage.
  • Voltage and Current: Ensure that the specified voltage and current values are within the acceptable range for the transistor to operate correctly.

Frequently Asked Questions

Q: What is the maximum voltage and current rating for the SI2308BDS-T1-GE3?
A: The SI2308BDS-T1-GE3 has a maximum voltage rating of X volts and a maximum current rating of X amps.

Q: Can the SI2308BDS-T1-GE3 be used in high-temperature environments?
A: Yes, the SI2308BDS-T1-GE3 is designed to operate within a specified temperature range, making it suitable for high-temperature applications.

Equivalent

For similar functionalities, consider these alternatives to the SI2308BDS-T1-GE3:

  • SI2309DS-T1-GE3: This is a similar P-channel MOSFET transistor from Siliconix, offering similar performance characteristics with slight variations in specifications.
  • Si2302DS: This is a low voltage P-channel MOSFET transistor from Vishay, providing similar functionality and package options to the SI2308BDS-T1-GE3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2.3 A Rds On - Drain-Source Resistance 156 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 2.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.66 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 7 ns
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 4 ns Part # Aliases SI2308BDS-T1-BE3 SI2308BDS-GE3
Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Q8016RH4

Q8016RH4

Non-Isolated TO-220AB TRIAC 800V 200A
2SK184GR

2SK184GR

N-channel junction field-effect transistor with 6.5mA current
BU406TU

BU406TU

With its high speed capabilities, this Transistor is the perfect choice for horizontal deflection output in electronic devices
ZXTN08400BFFTA

ZXTN08400BFFTA

SOT23F packaged NPN transistor capable of handling 400V and 0.5A
SQJ431EP-T1-GE3

SQJ431EP-T1-GE3

High-voltage power transistor for demanding applications
NJL4302DG

NJL4302DG

Designed for power applications requiring efficient thermal management
packageimg

SI2308BDS-T1-GE3

SOT-23 packaged N-channel MOSFET capable of handling voltages up to 60V and currents up to 1.9A

Inventory:

7,771
Overview of SI2308BDS-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

Warranty & Returns close

After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

ems dhl ups japan-post-holdings sagawa yamato fedex

Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

ESD package package package

Payment

Which payment methods can be used to pay for goods

Accepted payment methods commonly encompass VISA, MasterCard, UnionPay, Western Union, PayPal, and various other options.

Should you have a particular payment preference or wish to seek information on rates and other specifics, please feel free to reach out to us.

hsbc paypal visa western union moneygram