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SI2307BDS-T1-E3

Description of SI2307BDS-T1-E3 product: P Channel SOT-23 MOSFETs with 30V voltage rating, 2.5A current rating, and 78mΩ resistance at 10V

Quantity Unit Price(USD) Ext. Price
1 $0.355 $0.36
10 $0.282 $2.82
30 $0.251 $7.53
100 $0.211 $21.10
500 $0.194 $97.00
1000 $0.184 $184.00

Inventory:8,644

*The price is for reference only.
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Overview of SI2307BDS-T1-E3

The SI2307BDS-T1-E3 is a P-channel MOSFET designed for use in low-voltage, high-speed switching applications. It features a compact SMD package and offers efficient power management for various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2307BDS-T1-E3 for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2307BDS-T1-E3 is a P-channel enhancement mode MOSFET designed for efficient power switching.
  • Low Voltage Operation: This MOSFET is suitable for low-voltage applications, providing high-speed switching at low power supply voltages.
  • Compact SMD Package: The SMD package offers space-saving benefits, making it suitable for compact electronic designs.

Note: For detailed technical specifications, please refer to the SI2307BDS-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management and switching applications in low-voltage electronic circuits.
  • Voltage Regulation: Can be utilized in voltage regulation and control circuits requiring P-channel MOSFETs.
  • Battery-Powered Devices: Suitable for use in battery-powered electronic devices for efficient power management.

Functionality

The SI2307BDS-T1-E3 P-channel MOSFET offers efficient power switching and management in low-voltage applications. It enables high-speed switching and reliable performance in various electronic circuits.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal for switching operations.
  • Drain and Source: Connect the drain (D) and source (S) pins to the circuit components for power switching applications.

Frequently Asked Questions

Q: What is the maximum voltage rating for the SI2307BDS-T1-E3?
A: The SI2307BDS-T1-E3 has a maximum voltage rating specified in the datasheet. Please refer to the datasheet for precise details.

Q: Is the SI2307BDS-T1-E3 suitable for high-frequency applications?
A: While the SI2307BDS-T1-E3 offers high-speed switching, specific frequency capabilities are dependent on the application's requirements. Refer to the datasheet for more information on frequency performance.

Equivalent

For similar functionalities, consider these alternatives to the SI2307BDS-T1-E3:

  • SI2345DS-T1-E3: Another P-channel MOSFET offering similar characteristics for power management applications.
  • DMP3098L-7: This P-channel MOSFET provides efficient power switching in low-voltage applications with comparable performance.
  • NDP6020P: An alternative P-channel MOSFET with features suitable for low-voltage and high-speed switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.5 A Rds On - Drain-Source Resistance 78 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 14 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 9 ns Width 1.6 mm
Part # Aliases SI2307BDS-T1-BE3 SI2307BDS-E3 Unit Weight 0.000282 oz

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packageimg

SI2307BDS-T1-E3

Description of SI2307BDS-T1-E3 product: P Channel SOT-23 MOSFETs with 30V voltage rating, 2.5A current rating, and 78mΩ resistance at 10V

Inventory:

8,644