SI2303CDS-T1-GE3
SI2303CDS-T1-GE3, P-channel MOSFET Transistor 1.9 A 30 V, 3-Pin SOT-23
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
6000 | $0.048 | $288.00 |
3000 | $0.051 | $153.00 |
500 | $0.059 | $29.50 |
150 | $0.066 | $9.90 |
50 | $0.075 | $3.75 |
5 | $0.093 | $0.46 |
Inventory:5,730
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : SI2303CDS-T1-GE3
-
Package/Case : SOT23-3
-
Manufacturer : VISHAY
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : SI2303CDS-T1-GE3 DataSheet (PDF)
-
Series : SI2303
Overview of SI2303CDS-T1-GE3
The SI2303CDS-T1-GE3 is an N-channel MOSFET transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.
Pinout
The SI2303CDS-T1-GE3 pinout refers to the configuration and function of each pin in its SOT-23-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the SI2303CDS-T1-GE3 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.
Features
- N-channel MOSFET transistor: The SI2303CDS-T1-GE3 is a small signal MOSFET commonly used in various applications such as power management, load switching, and battery protection circuits in portable electronic devices like smartphones, tablets, and laptops.
- Maximum drain-source voltage of 20V: The transistor can withstand a maximum drain-source voltage of 20V, making it suitable for low-voltage applications.
- Continuous drain current of 3.7A: The SI2303CDS-T1-GE3 has a continuous drain current of 3.7A, allowing it to handle moderate load currents.
- Low on-state resistance: The transistor's low on-state resistance reduces power loss and heat generation, making it suitable for high-frequency applications.
- High switching speed: The SI2303CDS-T1-GE3 has a high switching speed, allowing it to quickly turn ON/OFF and minimize switching losses.
Applications
- Power management in portable devices: The SI2303CDS-T1-GE3 is used in power management circuits of portable electronic devices like smartphones, tablets, and laptops to manage battery life and charging.
- Load switching in small circuits: The transistor is used as a load switch in small circuits to control the flow of current and minimize power consumption.
- Battery protection circuits: The SI2303CDS-T1-GE3 is used in battery protection circuits to prevent overcharging, over-discharging, and overheating of batteries.
Advantages and Disadvantages
Advantages
- High-speed switching: The SI2303CDS-T1-GE3 has a high switching speed, allowing it to quickly turn ON/OFF and minimize switching losses.
- Low power consumption: The transistor's low on-state resistance reduces power loss and heat generation, making it suitable for high-frequency applications.
- Compact size: The SI2303CDS-T1-GE3 is available in a compact SOT-23-3 package, making it ideal for space-constrained designs.
Disadvantages
- Sensitivity to noise: The SI2303CDS-T1-GE3 is sensitive to noise and electromagnetic interference (EMI), which can affect its performance and reliability.
- Limited current handling: The transistor has a limited continuous drain current of 3.7A, making it unsuitable for high-current applications.
Equivalents
- Si2302CDS-T1-GE3: The Si2302CDS-T1-GE3 is a similar N-channel MOSFET transistor with slightly different specifications and performance characteristics.
- Si2304CDS-T1-GE3: The Si2304CDS-T1-GE3 is another N-channel MOSFET transistor with higher current handling capabilities and slightly different specifications.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | VISHAY | Product Category | FETs - Single |
Series | TrenchFET® | Packaging | Alternate Packaging |
Part-Aliases | SMD/SMT | Unit-Weight | -55°C ~ 150°C (TJ) |
Mounting-Style | SOT-23-3 (TO-236) | Package-Case | Single |
Technology | MOSFET P-Channel, Metal Oxide | Operating-Temperature | 30V |
Mounting-Type | 2.7A (Tc) | Number-of-Channels | 190 mOhm @ 1.9A, 10V |
Supplier-Device-Package | 3V @ 250μA | Configuration | 8nC @ 10V |
FET-Type | 1 W | Power-Max | 37 ns |
Transistor-Type | 1.9 A | VDSS – Drain-Source Voltage | - 30 V |
Input Capacitance | 12 ns |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package ?
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment ?
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFB18N50KPBF
TO-220 package MOSFET with 220W power dissipation capability

IRFS9N60APBF
Power Field-Effect Transistor

SI2343CDS-T1-GE3
SI2343CDS-T1-GE3 features a P-channel design and a 30-volt rating

SI4925DDY-T1-GE3
MOSFET with P-Channel

SI7119DN-T1-GE3
P-Ch PowerPAK 1212-8 200V 1050mohm @ 10

SI7252DP-T1-GE3
SI7252DP-T1-GE3 Power Field-Effect Transistor

SI7469DP-T1-GE3
Single-Element N-Channel MOSFET, Capable of Handling 1.8A Drain Current

IRFB3207PBF
With a drain-source voltage of 75V and a continuous drain current of 75A, the IRFB3207PBF is designed for use in a wide range of electronic devices

DMG2305UXQ-7
MOSFET MOSFET BVDSS

BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel

DMMT3904W-7-F
Diodes Inc DMMT3904W-7-F Dual NPN Bipolar Transistor, 200 mA, 40 V, 6-Pin SOT-363

2SC2712-GR,LF
The 2SC2712-GR,LF is an NPN transistor capable of handling voltages up to 50V and dissipating power up to 150mW at a collector current of 2mA

SUM55P06-19L-E3
Single P-Channel 60V Power MOSFET with 0.019 Ohms Resistance in TO-263 Package

SI2303CDS-T1-GE3
SI2303CDS-T1-GE3, P-channel MOSFET Transistor 1.9 A 30 V, 3-Pin SOT-23
Inventory:
5,730
Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
Shipping
What channels of transportation of goods does the website support?
We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.







Package
How to ensure that the parts will be intact during transportation?
The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.




Payment
Which payment methods can be used to pay for goods
Accepted payment methods commonly encompass VISA, MasterCard, UnionPay, Western Union, PayPal, and various other options.
Should you have a particular payment preference or wish to seek information on rates and other specifics, please feel free to reach out to us.




