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SI2302DDS-T1-GE3

SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay

Quantity Unit Price(USD) Ext. Price
5 $0.209 $1.04
50 $0.169 $8.45
150 $0.152 $22.80
500 $0.131 $65.50
3000 $0.105 $315.00
6000 $0.100 $600.00

Inventory:5,223

*The price is for reference only.
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Submit your quote request for SI2302DDS-T1-GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI2302DDS-T1-GE3

The SI2302DDS-T1-GE3 is a P-channel MOSFET transistor designed for use in power management applications. This transistor features a low on-resistance and high current capability, making it ideal for power switching and regulation in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2302DDS-T1-GE3 for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2302DDS-T1-GE3 is a P-channel MOSFET transistor suitable for power management applications.
  • Low On-Resistance: This transistor offers low on-resistance for efficient power flow and minimal voltage drop.
  • High Current Capability: With its high current-handling capacity, the SI2302DDS-T1-GE3 can manage significant power loads.
  • Compact Size: Available in a small and compact package, this transistor can be easily integrated into circuit designs with limited space.
  • Enhanced Power Efficiency: The SI2302DDS-T1-GE3 contributes to improved power efficiency in electronic systems.

Note: For detailed technical specifications, please refer to the SI2302DDS-T1-GE3 datasheet.

Application

  • Power Switching: Ideal for use in power switching circuits for turning on and off power to various components or subsystems.
  • Voltage Regulation: Suitable for voltage regulation applications where precise control over power supply voltages is required.
  • Battery Management: Can be used in battery management systems to control the charging and discharging of batteries.

Functionality

The SI2302DDS-T1-GE3 is a P-channel MOSFET transistor that enables efficient power management and control in electronic devices. It facilitates the switching and regulation of power to optimize system performance.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal for turning the transistor on and off.
  • Source and Drain: Connect the source pin (S) to the ground or the source voltage and the drain pin (D) to the load or circuit output.

Frequently Asked Questions

Q: Can the SI2302DDS-T1-GE3 be used for high-power applications?
A: Yes, the SI2302DDS-T1-GE3 is suitable for high-power applications due to its low on-resistance and high current capability.

Equivalent

For similar functionalities, consider these alternatives to the SI2302DDS-T1-GE3:

  • SI2312DS-T1-GE3: Another P-channel MOSFET transistor with comparable specifications to the SI2302DDS-T1-GE3.
  • FDS8880: This is a P-channel PowerTrench MOSFET offering similar performance characteristics for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2.9 A Rds On - Drain-Source Resistance 57 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 850 mV
Qg - Gate Charge 3.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 860 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 7 ns
Product Type MOSFET Rise Time 7 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 8 ns Part # Aliases SI2302DDS-T1-BE3
Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SI2302DDS-T1-GE3

SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay

Inventory:

5,223
Overview of SI2302DDS-T1-GE3 Specifications Warranty & Returns Similar Products Popular Products

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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