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SI1926DL-T1-E3

N Channel 60V 370mA 1.4 ohm

Inventory:8,276

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Overview of SI1926DL-T1-E3

The SI1926DL-T1-E3 is a dual N-channel MOSFET with a low on-resistance and high-speed switching capabilities. This MOSFET is designed for use in power management applications where efficiency and performance are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI1926DL-T1-E3 MOSFET for better understanding.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs for efficient power management.
  • Low On-Resistance: The SI1926DL-T1-E3 offers low on-resistance for reduced power losses and improved efficiency.
  • High-Speed Switching: Enables fast switching transitions for optimized performance in power control circuits.
  • High Current Handling Capability: Capable of handling high currents, making it suitable for power applications.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in different power systems.

Note: For detailed technical specifications, please refer to the SI1926DL-T1-E3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems where efficient switching is required.
  • DC-DC Converters: Suitable for DC-DC converter applications due to its high-speed switching capabilities.
  • Motor Control: Can be utilized in motor control circuits for reliable and fast switching of currents.

Functionality

The SI1926DL-T1-E3 MOSFET is designed to efficiently switch high currents in power management applications, providing low on-resistance and high-speed performance for optimized power control.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pins (G) for controlling the switching operation.
  • Drain-Source Connection: Connect the load between the drain (D) and source (S) pins of the MOSFET.
  • Operating Voltage: Ensure the operating voltage falls within the specified range for safe and efficient operation.

Frequently Asked Questions

Q: Is the SI1926DL-T1-E3 suitable for high-frequency applications?
A: Yes, the high-speed switching capability of the SI1926DL-T1-E3 makes it suitable for high-frequency applications.

Equivalent

For alternatives with similar functionalities, consider these products:

  • SIR638DP-T1-GE3: A comparable dual N-channel MOSFET with similar performance characteristics.
  • SI7469DP-T1-GE3: Another dual N-channel MOSFET offering high-speed switching and low on-resistance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 370 mA Rds On - Drain-Source Resistance 1.4 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 900 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 510 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI1 Brand Vishay Semiconductors
Configuration Dual Fall Time 14 ns
Forward Transconductance - Min 159 mS Height 1 mm
Length 2.1 mm Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 6.5 ns
Width 1.25 mm Part # Aliases SI1926DL-T1-BE3 SI1926DL-E3
Unit Weight 0.000265 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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SI1926DL-T1-E3

N Channel 60V 370mA 1.4 ohm

Inventory:

8,276
Overview of SI1926DL-T1-E3 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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