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SI1539DL-T1-E3

Recommended substitute for MOSFET: 78-SI1539CDL-T1-GE3

Inventory:6,459

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Overview of SI1539DL-T1-E3

The SI1539DL-T1-E3 is an N-channel MOSFET transistor designed for use in power management and switching applications. It features a compact package and high efficiency, making it suitable for various electronic designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for control
  • D: Drain terminal for output
  • S: Source terminal for input/output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI1539DL-T1-E3 MOSFET for a visual representation.

Key Features

  • N-Channel MOSFET: The SI1539DL-T1-E3 is an N-channel MOSFET suitable for use in power switching applications.
  • High Efficiency: This transistor offers high efficiency in power management, reducing power losses in circuits.
  • Compact Package: The SI1539DL-T1-E3 comes in a space-saving package, making it ideal for compact electronic designs.
  • Low ON Resistance: With low ON resistance, this MOSFET minimizes voltage drops and heat generation during operation.
  • Wide Operating Voltage Range: Operates at a wide range of voltages, providing flexibility in various applications.

Note: For detailed technical specifications, please refer to the SI1539DL-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management systems requiring efficient switching capabilities.
  • DC-DC Converters: Suitable for use in DC-DC converter circuits for voltage regulation.
  • Motor Control: Can be used in motor control applications for electronic speed and direction control.

Functionality

The SI1539DL-T1-E3 N-channel MOSFET provides reliable and efficient switching functionality in electronic circuits, offering high performance in power management applications.

Usage Guide

  • Pin Connections: Connect the G (Gate), D (Drain), and S (Source) terminals according to the circuit requirements.
  • Voltage Rating: Ensure the operating voltage does not exceed the specified maximum ratings in the datasheet.
  • Heat Dissipation: Adequate heat sinking may be required based on the application's power dissipation requirements.

Frequently Asked Questions

Q: What is the maximum voltage rating of the SI1539DL-T1-E3?
A: The SI1539DL-T1-E3 has a maximum voltage rating specified in the datasheet. Please refer to the datasheet for precise details.

Q: Is the SI1539DL-T1-E3 suitable for high-frequency switching applications?
A: The SI1539DL-T1-E3's datasheet provides information on its switching characteristics, including frequency limitations. Consider the specific application requirements when selecting the transistor.

Equivalent

For similar functionalities, consider these alternatives to the SI1539DL-T1-E3:

  • SI2301DS-T1-GE3: A comparable N-channel MOSFET transistor with similar performance characteristics.
  • IRF3205: This power MOSFET offers high efficiency and power handling capabilities for various applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Tradename TrenchFET
Series SI1 Brand Vishay / Siliconix
Height 1 mm Length 2.1 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Width 1.25 mm
Part # Aliases SI1539DL-E3 Unit Weight 0.000265 oz

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SI1539DL-T1-E3

Recommended substitute for MOSFET: 78-SI1539CDL-T1-GE3

Inventory:

6,459