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SI1024X-T1-GE3

Dual N-Channel MOSFET, designed for applications requiring a 20V voltage tolerance and offering 700 milliohms resistance at 4.5V

Inventory:6,685

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Overview of SI1024X-T1-GE3

The SI1024X-T1-GE3 is a dual P-Channel MOSFET designed for power management applications.This MOSFET features a low on-resistance and high current capability,making it suitable for power switching and DC-DC converter circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI1024X-T1-GE3 for a visual representation.

Key Features

  • Dual P-Channel MOSFET:Provides two P-Channel MOSFETs in a single package for power control applications.
  • Low On-Resistance:Offers low on-resistance for efficient power switching and minimal power dissipation.
  • High Current Capability:Capable of handling high currents,making it suitable for power management in various applications.
  • Fast Switching Speed:Provides fast switching speeds for quick response times in power control circuits.
  • Robust Construction:The SI1024X-T1-GE3 is built to withstand thermal and electrical stresses for reliable operation.

Note:For detailed technical specifications,please refer to the SI1024X-T1-GE3 datasheet.

Application

  • Power Switching:Ideal for power switching applications in DC-DC converters,voltage regulators,and motor control circuits.
  • Battery Management:Suitable for battery management systems requiring efficient power control and low on-resistance.
  • Power Supplies:Used in power supply units to regulate and control the flow of power in electronic systems.

Functionality

The SI1024X-T1-GE3 dual P-Channel MOSFET enables efficient power management by controlling the flow of current in power circuits.It is a reliable component for various power switching applications.

Usage Guide

  • Gate Connection:Connect the gate pin (G) to the driving circuit to control the switching of the MOSFET.
  • Drain and Source Connections:Connect the drain pin (D) to the load and the source pin (S) to the ground for proper power flow.

Frequently Asked Questions

Q:Can the SI1024X-T1-GE3 be used in high-temperature environments?
A:Yes,the SI1024X-T1-GE3 is designed to operate in high-temperature environments and can withstand thermal stresses.

Equivalent

For similar functionalities,consider these alternatives to the SI1024X-T1-GE3:

  • SI7149DP-T1-GE3:A similar dual P-Channel MOSFET with comparable specifications for power management applications.
  • FDS8884:A dual P-Channel MOSFET from Fairchild Semiconductor offering similar features and performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-563-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 600 mA Rds On - Drain-Source Resistance 700 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 450 mV
Qg - Gate Charge 750 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 280 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI1 Brand Vishay Semiconductors
Configuration Dual Forward Transconductance - Min 1 S
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 10 ns
Part # Aliases SI1024X-GE3 Unit Weight 0.000212 oz

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packageimg

SI1024X-T1-GE3

Dual N-Channel MOSFET, designed for applications requiring a 20V voltage tolerance and offering 700 milliohms resistance at 4.5V

Inventory:

6,685