SI1022R-T1-GE3
MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A
Inventory:5,927
- 90-day after-sales guarantee
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Part Number : SI1022R-T1-GE3
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Package/Case : SOT23-3
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Manufacturer : SILICONIX
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Components Classification : Single FETs, MOSFETs
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Datesheet : SI1022R-T1-GE3 DataSheet (PDF)
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Series : SI1022
The SI1022R1-GE3 is a p-channel MOSFET designed for power management applications. provides efficient switching and power handling capabilities, making it suitable for various electronic systems. Incorporate a circuit diagram that illustrates the and operation of the SI1022R-T1-GE3 MOSFET for a more visual representation. Note: For detailed technical specifications, please refer to the SI1022R-T1-GE3 datasheet.Overview of SI1022R-T1-GE3
Pinout
Circuit Diagram
Frequently Asked Questions:
Q: What is the maximum drain-source voltage for the1022R-T1-GE3?
. A:The maximum drain-source voltage this MOSFET is [put value here]. Q: What are some typical applications of the SI1022R-T1-GE?. A:The MOSFET can be used effectively in battery protection circuits, load switches, and other power management systems. Q: Is there an alternative to the 74LS08?. A:The closest alternative to this IC is [put name here].Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-416-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 330 mA | Rds On - Drain-Source Resistance | 2.25 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 600 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 250 mW |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI1 | Brand | Vishay Semiconductors |
Configuration | Single | Forward Transconductance - Min | 100 mS |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 35 ns | Typical Turn-On Delay Time | 25 ns |
Part # Aliases | SI1022R-GE3 | Unit Weight | 0.000085 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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SI1022R-T1-GE3
MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A
Inventory:
5,927
Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.




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