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SI1022R-T1-GE3

MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A

Inventory:5,927

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Overview of SI1022R-T1-GE3

The SI1022R1-GE3 is a p-channel MOSFET designed for power management applications. provides efficient switching and power handling capabilities, making it suitable for various electronic systems.


Pinout

  • G Gate
  • D: Drain Pin
  • <>S: Source Pin

Circuit Diagram

Incorporate a circuit diagram that illustrates the and operation of the SI1022R-T1-GE3 MOSFET for a more visual representation.


Key Features
  • Low On-Resistance: The SI1022R-T1-GE3 offers low on-resistance, minimizing power losses and improving efficiency in management applications.

Note: For detailed technical specifications, please refer to the SI1022R-T1-GE3 datasheet.

Frequently Asked Questions:

Q: What is the maximum drain-source voltage for the1022R-T1-GE3?

. A:The maximum drain-source voltage this MOSFET is [put value here]. Q: What are some typical applications of the SI1022R-T1-GE?

. A:The MOSFET can be used effectively in battery protection circuits, load switches, and other power management systems. Q: Is there an alternative to the 74LS08?

. A:The closest alternative to this IC is [put name here].

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-416-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 330 mA Rds On - Drain-Source Resistance 2.25 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 600 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 250 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI1 Brand Vishay Semiconductors
Configuration Single Forward Transconductance - Min 100 mS
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 35 ns Typical Turn-On Delay Time 25 ns
Part # Aliases SI1022R-GE3 Unit Weight 0.000085 oz

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SI1022R-T1-GE3

MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A

Inventory:

5,927