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SI1016CX-T1-GE3

Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R

Inventory:8,855

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Overview of SI1016CX-T1-GE3

The SI1016CX-T1-GE3 is a dual N-channel MOSFET designed for high-speed switching applications. It features a compact package and high efficiency, making it suitable for various power management and DC-DC converter circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for the MOSFET
  • D: Drain terminal for the MOSFET
  • S: Source terminal for the MOSFET
  • G: Gate terminal for the MOSFET
  • D: Drain terminal for the MOSFET
  • S: Source terminal for the MOSFET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI1016CX-T1-GE3 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs for efficient switching.
  • High-Speed Switching: The SI1016CX-T1-GE3 offers fast switching speeds, ideal for high-frequency applications.
  • Low ON-Resistance: With low RDS(ON), it minimizes power loss and heat generation during operation.
  • Compact Package: Available in a space-saving package, suitable for compact circuit designs.
  • High Efficiency: The MOSFET ensures high efficiency in power management applications.

Note: For detailed technical specifications, please refer to the SI1016CX-T1-GE3 datasheet.

Application

  • Power Management: Ideal for use in power management circuits, such as DC-DC converters and voltage regulation.
  • Motor Control: Suitable for controlling motors and actuators in various electronic systems.
  • Switching Circuits: Used in high-speed switching applications for efficient power control.

Functionality

The SI1016CX-T1-GE3 MOSFET is designed for high-speed switching operations, offering low ON-resistance and high efficiency in power management applications.

Usage Guide

  • Gate Drive: Apply appropriate voltage levels to the gate terminals for efficient switching.
  • Connection: Connect the drain and source terminals to the respective circuit components based on the application requirements.
  • Heat Dissipation: Ensure proper heat sinking to maintain the MOSFET within the operating temperature range.

Frequently Asked Questions

Q: Is the SI1016CX-T1-GE3 suitable for automotive applications?
A: Yes, the SI1016CX-T1-GE3 is designed for automotive-grade performance and can be used in automotive electronics.

Equivalent

For similar functionalities, consider these alternatives to the SI1016CX-T1-GE3:

  • SI2312CDS-T1-GE3: Another dual N-channel MOSFET with similar performance characteristics and package options.
  • SI2301CDS-T1-GE3: This MOSFET offers comparable specifications to the SI1016CX-T1-GE3 for high-speed switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SC-89-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 350 mA, 500 mA Rds On - Drain-Source Resistance 396 mOhms, 756 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 1.3 nC, 1.65 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 220 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI1 Brand Vishay Semiconductors
Configuration Dual Fall Time 8 ns, 11 ns
Forward Transconductance - Min 1 S, 2 S Product Type MOSFET
Rise Time 10 ns, 16 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 10 ns, 26 ns Typical Turn-On Delay Time 9 ns, 11 ns
Unit Weight 0.000106 oz

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packageimg

SI1016CX-T1-GE3

Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R

Inventory:

8,855