SI1016CX-T1-GE3
Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R
Inventory:8,855
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Part Number : SI1016CX-T1-GE3
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Package/Case : SOT-563
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Manufacturer : SILICONIX
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Components Classification : FET, MOSFET Arrays
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Datesheet : SI1016CX-T1-GE3 DataSheet (PDF)
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Series : SI1016CX
The SI1016CX-T1-GE3 is a dual N-channel MOSFET designed for high-speed switching applications. It features a compact package and high efficiency, making it suitable for various power management and DC-DC converter circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI1016CX-T1-GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SI1016CX-T1-GE3 datasheet. Functionality The SI1016CX-T1-GE3 MOSFET is designed for high-speed switching operations, offering low ON-resistance and high efficiency in power management applications. Usage Guide Q: Is the SI1016CX-T1-GE3 suitable for automotive applications? For similar functionalities, consider these alternatives to the SI1016CX-T1-GE3:Overview of SI1016CX-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI1016CX-T1-GE3 is designed for automotive-grade performance and can be used in automotive electronics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SC-89-6 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 350 mA, 500 mA | Rds On - Drain-Source Resistance | 396 mOhms, 756 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 1.3 nC, 1.65 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 220 mW |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI1 | Brand | Vishay Semiconductors |
Configuration | Dual | Fall Time | 8 ns, 11 ns |
Forward Transconductance - Min | 1 S, 2 S | Product Type | MOSFET |
Rise Time | 10 ns, 16 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 10 ns, 26 ns | Typical Turn-On Delay Time | 9 ns, 11 ns |
Unit Weight | 0.000106 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package ?
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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SI1016CX-T1-GE3
Trans MOSFET N/P-CH 20V 0.6A 6-Pin SC-89 T/R
Inventory:
8,855Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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Package
How to ensure that the parts will be intact during transportation?
The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.
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