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SGW30N60HS

IGBT Transistors with High Speed NPT Technology, 30 Amps and 600 Volts

Quantity Unit Price(USD) Ext. Price
1000 $0.944 $944.00
500 $0.962 $481.00
200 $0.996 $199.20
1 $2.574 $2.57

Inventory:6,232

*The price is for reference only.
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Overview of SGW30N60HS

The SGW30N60HS is an N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications. It features a high current capability, low saturation voltage, and fast switching speed, making it suitable for use in power supply, motor control, and renewable energy systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connects to the high side of the load in the switching circuit.
  • Emitter (E): Connects to the low side of the load and ground reference.
  • GATE: Input for controlling the IGBT switching action.
  • Collector (C): Connects to the high side of the load in the switching circuit.
  • Emitter (E): Connects to the low side of the load and ground reference.
  • GATE: Input for controlling the IGBT switching action.
  • Collector (C): Connects to the high side of the load in the switching circuit.
  • Emitter (E): Connects to the low side of the load and ground reference.
  • GATE: Input for controlling the IGBT switching action.
  • VCC: Positive power supply for the gate driver circuit.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SGW30N60HS IGBT for a visual representation.

Key Features

  • High Current Capability: The SGW30N60HS can handle high current levels, making it suitable for power switching applications.
  • Low Saturation Voltage: With its low saturation voltage, this IGBT minimizes power loss during operation.
  • Fast Switching Speed: The fast switching speed enables efficient and responsive control of the switching circuit.
  • High Input Impedance: The IGBT features high input impedance, allowing for easy interfacing with gate driver circuits.
  • Temperature and Overcurrent Protection: Includes built-in protection features to safeguard the device and the connected circuitry.

Note: For detailed technical specifications, please refer to the SGW30N60HS datasheet.

Application

  • Power Supplies: Ideal for use in high-power switch-mode power supply (SMPS) designs.
  • Motor Control: Suitable for motor drive and control applications, such as inverter and servo drive systems.
  • Renewable Energy Systems: Used in renewable energy inverters and converters for efficient power conversion.

Functionality

The SGW30N60HS is an N-channel IGBT designed for high-power switching applications. It provides efficient and reliable control of high currents in various power electronic systems.

Usage Guide

  • Power Supply: Connect the VCC pin to the positive power supply for the gate driver circuit.
  • Gate Control: Apply appropriate gate voltage and drive signals to control the switching action of the IGBT.
  • Load Connection: Connect the collector terminal to the high side of the load and the emitter terminal to the low side and ground reference.

Frequently Asked Questions

Q: Can the SGW30N60HS be used in high-frequency switching applications?
A: While the SGW30N60HS has fast switching speed, it's important to consider the application's specific requirements and operating conditions for high-frequency use.

Equivalent

For similar functionalities, consider these alternatives to the SGW30N60HS:

  • IRGP4063DPBF: This is a similar high-power IGBT from Infineon with comparable performance characteristics.
  • FGH40N60SFD: A high-speed, high-power IGBT from Fairchild Semiconductor suitable for similar power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series SGW30N60 Brand Infineon Technologies
Continuous Collector Current Ic Max 41 A Height 20.95 mm
Length 15.9 mm Product Type IGBT Transistors
Factory Pack Quantity 240 Subcategory IGBTs
Width 5.3 mm Part # Aliases SGW30N60HSXK SP000013770 SGW30N60HSFKSA1
Unit Weight 1.340411 oz

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SGW30N60HS

IGBT Transistors with High Speed NPT Technology, 30 Amps and 600 Volts

Inventory:

6,232