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IGBT Transistors FAST IGBT NPT TECH 1200V 15A

Quantity Unit Price(USD) Ext. Price
1 $8.190 $8.19
200 $3.170 $634.00
500 $3.059 $1,529.50
1000 $3.003 $3,003.00


*The price is for reference only.
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Submit your quote request for SGP15N120 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SGP15N120

Infineon's SGP15N120 IGBT is a versatile and adaptable component that meets the needs of modern power electronics applications. Its superior thermal performance and low switching losses make it an energy-efficient solution for various power conversion tasks. Whether it's for residential, commercial, or industrial use, the SGP15N120 offers an excellent balance of performance and cost-effectiveness. With its wide operating temperature range and high reliability, this IGBT can withstand challenging conditions and deliver consistent results




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SGP15N120 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Case Connection COLLECTOR
Collector Current-Max (IC) 30 A Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE Fall Time-Max (tf) 26 ns
Gate-Emitter Thr Voltage-Max 5 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 198 W Qualification Status Not Qualified
Rise Time-Max (tr) 24 ns Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 683 ns
Turn-on Time-Nom (ton) 68 ns

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