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SDP8436-003

Reliable and stable optical detection solution for various industrie

Inventory:8,327

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
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Submit your quote request for SDP8436-003 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SDP8436-003

The SDP8436-003 is a high-power gallium nitride (GaN) field-effect transistor (FET) designed for RF power amplifier applications. It offers high efficiency and power density, making it suitable for various wireless communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GND: Ground connection
  • VDD: Drain voltage supply
  • VGG: Gate voltage supply
  • VSS: Source voltage supply
  • VDG: Drain-Gate voltage supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SDP8436-003 GaN FET for a visual representation.

Key Features

  • High-Power GaN FET: Designed for high-power RF amplification applications.
  • High Efficiency: Offers high efficiency for improved performance.
  • Power Density: Provides high power density in a compact package.
  • Wide Frequency Range: Suitable for a broad range of RF frequencies.
  • Low Thermal Resistance: Features low thermal resistance for enhanced thermal management.

Note: For detailed technical specifications, please refer to the SDP8436-003 datasheet.

Application

  • Wireless Communication Systems: Ideal for RF power amplifier applications in wireless communication systems.
  • Radar Systems: Suitable for radar applications requiring high-power amplification.
  • Satellite Communication: Used in satellite communication systems for efficient RF power amplification.

Functionality

The SDP8436-003 GaN FET is designed to amplify RF signals with high efficiency and power density. It offers reliable performance in various RF power amplifier applications.

Usage Guide

  • Power Supply: Connect VDD (Drain voltage supply) and VGG (Gate voltage supply) to the appropriate power sources.
  • Heat Dissipation: Ensure proper thermal management to maintain the FET's performance under high-power operation.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the SDP8436-003?
A: The SDP8436-003 can operate over a wide frequency range, typically up to X GHz.

Q: Is the SDP8436-003 suitable for mobile communication applications?
A: Yes, the SDP8436-003 is well suited for high-power RF amplification in mobile communication systems.

Equivalent

For similar functionalities, consider these alternatives to the SDP8436-003:

  • SDP8445-001: Another high-power GaN FET offering similar performance characteristics.
  • SiC8236-002: A silicon carbide (SiC) FET with high-power capabilities for RF amplification applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 30 V Current - Collector (Ic) (Max) 17 mA
Current - Dark (Id) (Max) 100 nA Wavelength 880nm
Viewing Angle 18° Power - Max 100 mW
Mounting Type Through Hole, Right Angle Orientation Side View
Operating Temperature -40°C ~ 85°C (TA) Package / Case Radial

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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SDP8436-003

Reliable and stable optical detection solution for various industrie

Inventory:

8,327