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SDP20S30

Schottky Diodes & Rectifiers 300V 10A Silicon Carbide Diode

Inventory:5,251

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Overview of SDP20S30

The SDP20S30 is a dual N-channel MOSFET transistor designed for high-power switching applications.It features a drain-source voltage of 30V and a continuous drain current of 20A,making it suitable for various power control and conversion tasks.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • S:Source
  • D:Drain
  • S:Source
  • D:Drain


Circuit Diagram

Include a circuit diagram showing how the SDP20S30 MOSFET is connected in a typical switching circuit for a visual understanding of its operation.

Key Features

  • Dual N-Channel MOSFET: The SDP20S30 comprises two N-channel MOSFETs in a single package, allowing for versatile high-power switching applications.
  • High Voltage and Current Ratings: With a drain-source voltage of 30V and a continuous drain current of 20A, this MOSFET is capable of handling significant power loads.
  • Low On-Resistance: The SDP20S30 exhibits low on-resistance, minimizing power loss and improving efficiency in power switching circuits.
  • Fast Switching Speed: This MOSFET offers fast switching characteristics, enabling rapid transitions between on and off states in high-frequency applications.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, the SDP20S30 can operate reliably under high-power conditions.

Note: For detailed technical specifications, please refer to the SDP20S30 datasheet.

Application

  • Power Supplies: Ideal for use in switch-mode power supplies, DC-DC converters, and other power control systems.
  • Motor Control: Suitable for motor drive applications where high-power switching is required for controlling motor speed and direction.
  • Inverters: Used in inverter circuits for converting DC power to AC power in applications such as solar inverters and UPS systems.

Functionality

The SDP20S30 is a dual N-channel MOSFET transistor that enables high-power switching operations in various electronic circuits. Its high voltage and current ratings, combined with low on-resistance, make it a reliable component for power control applications.

Usage Guide

  • Gate Drive: Apply appropriate voltage levels to the gate pin for turning the MOSFET on and off.
  • Source and Drain Connections: Connect the source pin to the ground reference and the drain pin to the load or power supply.
  • Thermal Management: Ensure proper heat sinking or thermal design to maintain the MOSFET within its temperature limits during operation.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the SDP20S30?
A: The SDP20S30 has a maximum drain-source voltage rating of 30V.

Q: Can the SDP20S30 handle peak current beyond its continuous rating?
A: While the SDP20S30 is rated for a continuous drain current of 20A, it may handle short peak currents within its safe operating limits. However, consistent operation beyond the rated current may affect device reliability.

Equivalent

For similar functionalities, consider these alternatives to the SDP20S30:

  • FQP30N06L: A comparable N-channel MOSFET with similar voltage and current ratings for high-power switching applications.
  • IRF3205: This MOSFET offers higher voltage and current ratings than the SDP20S30, suitable for applications requiring greater power handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Schottky Diodes & Rectifiers RoHS Details
Product Schottky Silicon Carbide Diodes Mounting Style Through Hole
Package / Case TO-220 Configuration Dual Anode Common Cathode
Technology SiC If - Forward Current 10 A
Vrrm - Repetitive Reverse Voltage 300 V Vf - Forward Voltage 1.7 V
Ifsm - Forward Surge Current 36 A Ir - Reverse Current 200 uA
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Brand Infineon Technologies Height 9.25 mm
Length 10 mm Pd - Power Dissipation 65 W
Product Type Schottky Diodes & Rectifiers Factory Pack Quantity 500
Subcategory Diodes & Rectifiers Termination Style Through Hole
Type Silicon Carbide Schottky Diode Width 4.4 mm
Unit Weight 0.081130 oz

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SDP20S30

Schottky Diodes & Rectifiers 300V 10A Silicon Carbide Diode

Inventory:

5,251