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SD2931-12

RF MOSFET TRANSISTORS RF PWR N-CH MOS 150W 14DB 175MHZ

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Overview of SD2931-12

The SD2931-12 is a high-power VHF RF power transistor designed for use in amplification applications in the VHF frequency range. This transistor offers high output power and efficiency, making it suitable for various RF power amplifier designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Output
  • Base (B): Input
  • Emitter (E): Ground
  • Collector (C): Output
  • Base (B): Input
  • Emitter (E): Ground
  • Voltage Supply (VCC)
  • Heat Sink Connection

Circuit Diagram

Include a circuit diagram illustrating the connection of the SD2931-12 in an RF power amplifier circuit for visual representation.

Key Features

  • High Power Output: The SD2931-12 offers high output power capabilities, suitable for demanding RF amplification requirements.
  • Efficiency: This RF power transistor is designed for high efficiency, minimizing power losses in the amplification process.
  • Operating Frequency: The SD2931-12 is optimized for VHF frequencies, ensuring reliable performance in VHF amplifier applications.
  • Durable Construction: With a rugged design, this transistor can withstand high power levels and challenging operating conditions.
  • Wide Supply Voltage Range: Operates within a wide voltage range, accommodating different power supply configurations.

Note: For detailed technical specifications, please refer to the SD2931-12 datasheet.

Application

  • VHF Amplifiers: Ideal for use in VHF power amplifier circuits for applications such as radio broadcasting, radar systems, and amateur radio.
  • Broadcast Transmitters: Suitable for integration into broadcast transmitter systems for transmitting high-power VHF signals.
  • RF Communication Systems: Used in RF communication systems requiring high-power amplification in the VHF frequency band.

Functionality

The SD2931-12 is a high-power VHF RF transistor designed to amplify RF signals efficiently and reliably in VHF applications. It provides high output power with excellent efficiency, making it a key component in VHF amplifier systems.

Usage Guide

  • Power Supply: Connect the VCC pin to the appropriate voltage supply based on the operational requirements.
  • Heat Dissipation: Ensure proper heat sinking for optimal performance and to dissipate the heat generated during operation.
  • Amplifier Design: Follow the recommended circuit configurations and biasing conditions outlined in the datasheet for best results.

Frequently Asked Questions

Q:What is the maximum operating frequency of the SD2931-12?
A:The SD2931-12 is optimized for VHF frequencies, typically in the range of 30 MHz to 300 MHz.

Q:Can the SD2931-12 be used in amateur radio applications?
A:Yes, the SD2931-12 is suitable for amateur radio amplification projects requiring high-power VHF capabilities.

Equivalent

For high-power VHF RF transistor alternatives, consider these options:

  • SD2932-12: A higher power variant of the SD2931-12 offering increased output capabilities.
  • MRF151G: A popular VHF power transistor known for its high performance and efficiency in RF amplifier applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors RoHS True
Transistor Polarity N-Channel Technology Si
Id - Continuous Drain Current 20 A Vds - Drain-Source Breakdown Voltage 125 V
Operating Frequency 230 MHz Gain 15 dB
Output Power 150 W Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Package / Case M174
Brand STMicroelectronics Configuration Single
Pd - Power Dissipation 389 W Product Type RF MOSFET Transistors
Series SD2931 Factory Pack Quantity 50
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V

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